Datasheet > ST330C08L2PBF

ST330C08L2PBF

更新时间： 2024-11-04 09:06:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	160K
描述
Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC, LEAD FREE, METAL, BPUK-4

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ST330C08L2PBF 数据手册

ST330CLPbF Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 650 A

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case TO-200AC (B-PUK)

• High profile hockey PUK

• Lead (Pb)-free

TO-200AC (B-PUK)

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

PRODUCT SUMMARY

I_T(AV)

650 A

• Controlled DC power supplies

• AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

TEST CONDITIONS

VALUES

650

UNITS

°C

I_T(AV)

T_hs

1230

I_T(RMS)

I_TSM

I²t

T_hs

°C

50 Hz

60 Hz

50 Hz

60 Hz

9000

9420

405

kA²s

370

V_DRM/V_RRM

400 to 2000

100

t_q

Typical

µs

°C

T_J

- 40 to 125

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

_DRM/V_RRM, MAXIMUM REPETITIVE PEAK

_RSM, MAXIMUM

_DRM/I_RRMMAXIMUM

VOLTAGE

CODE

TYPE NUMBER

AND OFF-STATE VOLTAGE

NON-REPETITIVE PEAK VOLTAGE AT T_J= T_JMAXIMUM

400

800

500

900

1200

1400

1600

1800

2000

1300

1500

1700

1900

2100

ST330C..L

Document Number: 94408

Revision: 16-Oct-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

12 3 4 5 6 7 8

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ST330C08L3	VISHAY	获取价格	Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 800V V(DRM), 800V V(RRM), 1 El
ST330C08L3L	VISHAY	获取价格	Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 800V V(DRM), 800V V(RRM), 1 El
ST330C08L3LPBF	VISHAY	获取价格	Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 800V V(DRM), 800V V(RRM), 1 El
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ST330C10L0	INFINEON	获取价格	Silicon Controlled Rectifier, 1230A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200
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ST330C11111	INFINEON	获取价格	PHASE CONTROL THYRISTORS Hockey Puk Version
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