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ST330C12L0 PDF预览

ST330C12L0

更新时间: 2024-11-03 20:06:31
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极
页数 文件大小 规格书
8页 83K
描述
Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AC, BPUK-2

ST330C12L0 数据手册

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Bulletin I25154 rev. D 04/03  
ST330C..L SERIES  
Hockey Puk Version  
PHASE CONTROL THYRISTORS  
Features  
Center amplifying gate  
Metal case with ceramic insulator  
International standard case TO-200AC (B-PUK)  
High profile hockey-puk  
650A  
Typical Applications  
DC motor controls  
Controlled DC power supplies  
AC controllers  
case style TO-200AC (B-PUK)  
Major Ratings and Characteristics  
Parameters  
IT(AV)  
ST330C..L  
650  
Units  
A
@ T  
55  
°C  
hs  
IT(RMS)  
1230  
25  
A
@ T  
°C  
hs  
ITSM  
@ 50Hz  
@ 60Hz  
@ 50Hz  
@ 60Hz  
9000  
9420  
405  
A
A
I2t  
KA2s  
KA2s  
370  
VDRM/VRRM  
400 to 2000  
100  
V
t
typical  
µs  
q
TJ  
- 40 to 125  
°C  
www.irf.com  
1

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ST330C12L0L INFINEON

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Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 1200V V(DRM), 1200V V(RRM), 1
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Silicon Controlled Rectifier, 1230A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200
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ST330C12L0PBF VISHAY

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Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 1200V V(DRM), 1200V V(RRM), 1
ST330C12L1 VISHAY

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Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 1200V V(DRM), 1200V V(RRM), 1
ST330C12L1LPBF INFINEON

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Silicon Controlled Rectifier, 1230A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200
ST330C12L2 VISHAY

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Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 1200V V(DRM), 1200V V(RRM), 1
ST330C12L2LPBF INFINEON

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Silicon Controlled Rectifier, 1230A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200
ST330C12L2PBF VISHAY

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Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 1200V V(DRM), 1200V V(RRM), 1
ST330C12L3 INFINEON

获取价格

Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 1200V V(DRM), 1200V V(RRM), 1