Datasheet > 触发装置 > 可控硅整流器> ST330C12C2PBF

ST330C12C2PBF

更新时间： 2024-11-03 13:14:03

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极触发装置可控硅整流器
页数	文件大小	规格书
8页	89K
描述
Silicon Controlled Rectifier, 1420A I(T)RMS, 720000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB, METAL, EPUK-4

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ST330C12C2PBF 数据手册

Bulletin I25155 rev. D 04/03

ST330C..C SERIES

PHASE CONTROL THYRISTORS

Hockey Puk Version

Features

Center amplifying gate

720A

Metal case with ceramic insulator

International standard case TO-200AB (E-PUK)

Typical Applications

DC motor controls

Controlled DC power supplies

AC controllers

case style TO-200AB (E-PUK)

Major Ratings and Characteristics

Parameters

I_T(AV)

ST330C..C

720

Units

@ T

°C

I_T(RMS)

1420

@ T

°C

I_TSM

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

9000

9420

405

I²t

KA²s

370

V_DRM/V_RRM

400 to 1600

100

typical

µs

T_J

- 40 to 125

°C

www.irf.com

12 3 4 5 6 7 8

中文翻译

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与ST330C12C2PBF相关器件

型号	品牌	获取价格	描述	数据表
ST330C12C3	INFINEON	获取价格	PHASE CONTROL THYRISTORS
ST330C12C3	VISHAY	获取价格	Silicon Controlled Rectifier, 1420A I(T)RMS, 720000mA I(T), 1200V V(DRM), 1200V V(RRM), 1
ST330C12C3L	INFINEON	获取价格	PHASE CONTROL THYRISTORS
ST330C12C3L	VISHAY	获取价格	Silicon Controlled Rectifier, 1420A I(T)RMS, 720000mA I(T), 1200V V(DRM), 1200V V(RRM), 1
ST330C12C3LPBF	INFINEON	获取价格	Silicon Controlled Rectifier, 1420A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200
ST330C12C3LPBF	VISHAY	获取价格	Silicon Controlled Rectifier, 1420A I(T)RMS, 720000mA I(T), 1200V V(DRM), 1200V V(RRM), 1
ST330C12C3PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 1420A I(T)RMS, 720000mA I(T), 1200V V(DRM), 1200V V(RRM), 1
ST330C12L0	INFINEON	获取价格	Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 1200V V(DRM), 1200V V(RRM), 1
ST330C12L0L	INFINEON	获取价格	Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 1200V V(DRM), 1200V V(RRM), 1
ST330C12L0LPBF	INFINEON	获取价格	Silicon Controlled Rectifier, 1230A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200