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SST39SF020-90-4I-UH

更新时间： 2024-11-22 22:33:35
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SST 闪存
页数 文件大小 规格书
23页 230K
描述
2 Megabit (256K x 8) Multi-Purpose Flash

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2 Megabit (256K x 8) Multi-Purpose Flash  
SST39SF020  
Preliminary Specifications  
FEATURES:  
•
•
•
Organized as 256 K X 8  
•
Fast Sector Erase and Byte Program:  
1
– Sector Erase Time: 7 ms (typical)  
– Chip Erase Time: 15 ms (typical)  
– Byte Program time: 20 µs (typical)  
– Chip Rewrite Time: 5 seconds (typical)  
Single 5.0V Read and Write Operations  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
2
•
•
Automatic Write Timing  
- Internal Vpp Generation  
End of Write Detection  
•
Low Power Consumption:  
– Active Current: 20 mA (typical)  
– Standby Current: 10 µA (typical)  
3
– Toggle Bit  
– Data# Polling  
•
•
•
Sector Erase Capability  
– Uniform 4 KByte sectors  
Fast Read Access Time:  
– 70 and 90 ns  
4
•
•
TTL I/O Compatibility  
JEDEC Standard  
– EEPROM Pinouts and command set  
Packages Available  
5
Latched Address and Data  
•
– 32-Pin PDIP  
– 32-Pin PLCC  
– 32-Pin TSOP (8mm x 14mm)  
6
7
PRODUCT DESCRIPTION  
consumption. The SST39SF020 inherently uses less  
energy during erase and program than alternative flash  
technologies.Thetotalenergyconsumedisafunctionof  
the applied voltage, current, and time of application.  
Since for any given voltage range, the SuperFlash tech-  
nology uses less current to program and has a shorter  
erase time, the total energy consumed during any Erase  
or Program operation is less than alternative flash tech-  
nologies. The SST39SF020 device also improves flex-  
ibility while lowering the cost for program, data, and  
configuration storage applications.  
The SST39SF020 is a 256K x 8 CMOS Multi-Purpose  
Flash (MPF) manufactured with SST’s proprietary, high  
performance CMOS SuperFlash technology. The split  
gate cell design and thick oxide tunneling injector attain  
better reliability and manufacturability compared with  
alternate approaches. The SST39SF020 device writes  
(Program or Erase) with a 5.0V-only power supply. The  
SST39SF020 device conforms to JEDEC standard  
pinouts for x8 memories.  
8
9
10  
11  
12  
13  
14  
15  
16  
Featuring high performance byte program, the  
SST39SF020 device provides a maximum byte-pro-  
gram time of 30 µsec. The entire memory can be erased  
and programmed byte by byte typically in 5 seconds,  
when using interface features such as Toggle Bit or  
Data# Polling to indicate the completion of Program  
operation. To protect against inadvertent write, the  
SST39SF020 device has on-chip hardware and soft-  
ware data protection schemes. Designed, manufac-  
tured,andtestedforawidespectrumofapplications,the  
SST39SF020deviceisofferedwithaguaranteedendur-  
ance of 10,000 cycles. Data retention is rated at greater  
than 100 years.  
The SuperFlash technology provides fixed Erase and  
Programtimes,independentofthenumberofendurance  
cycles that have occurred. Therefore the system soft-  
ware or hardware does not have to be modified or de-  
ratedasisnecessarywithalternativeflashtechnologies,  
whose erase and program times increase with accumu-  
lated endurance cycles.  
To meet high density, surface mount requirements, the  
SST39SF020 device is offered in 32-pin TSOP and 32-  
pin PLCC packages. A 600 mil, 32-pin PDIP is also  
available. See Figures 1 and 2 for pinouts.  
The SST39SF020 device is suited for applications that  
requireconvenientandeconomicalupdatingofprogram,  
configuration, or data memory. For all system applica-  
tions, the SST39SF020 device significantly improves  
performance and reliability, while lowering power  
Device Operation  
Commands are used to initiate the memory operation  
functions of the device. Commands are written to the  
deviceusingstandardmicroprocessorwritesequences.  
A command is written by asserting WE# low while  
© 1998 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon storage Technology, Inc.  
326-10 12/98 These specifications are subject to change without notice.  
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