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SST39SF020A-55-5I-WHE PDF预览

SST39SF020A-55-5I-WHE

更新时间: 2024-11-01 12:01:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
28页 273K
描述
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

SST39SF020A-55-5I-WHE 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TSOP1
包装说明:TSSOP,针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.59
Is Samacsys:N最长访问时间:55 ns
JESD-30 代码:R-PDSO-G32JESD-609代码:e3
长度:12.4 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:32
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
编程电压:5 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

SST39SF020A-55-5I-WHE 数据手册

 浏览型号SST39SF020A-55-5I-WHE的Datasheet PDF文件第2页浏览型号SST39SF020A-55-5I-WHE的Datasheet PDF文件第3页浏览型号SST39SF020A-55-5I-WHE的Datasheet PDF文件第4页浏览型号SST39SF020A-55-5I-WHE的Datasheet PDF文件第5页浏览型号SST39SF020A-55-5I-WHE的Datasheet PDF文件第6页浏览型号SST39SF020A-55-5I-WHE的Datasheet PDF文件第7页 
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash  
SST39SF010A / SST39SF020A / SST39SF040  
Data Sheet  
The SST39SF010A / SST39SF020A / SST39SF040 are CMOS Multi-Purpose  
Flash (MPF) devices manufactured with SST proprietary, high performance  
CMOS SuperFlash technology. The split-gate cell design and thick oxide tunnel-  
ing injector attain better reliability and manufacturability compared with alternate  
approaches. The SST39SF010A / SST39SF020A / SST39SF040 write (Program  
or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts  
for x8 memories  
Features  
• Organized as 128K x8 / 256K x8 / 512K x8  
• Single 4.5-5.5V Read and Write Operations  
• Superior Reliability  
• Fast Erase and Byte-Program  
– Sector-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– Chip Rewrite Time:  
2 seconds (typical) for SST39SF010A  
4 seconds (typical) for SST39SF020A  
8 seconds (typical) for SST39SF040  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
• Low Power Consumption  
(typical values at 14 MHz)  
• End-of-Write Detection  
– Active Current: 10 mA (typical)  
– Standby Current: 30 µA (typical)  
Toggle Bit  
– Data# Polling  
• Sector-Erase Capability  
• TTL I/O Compatibility  
– Uniform 4 KByte sectors  
• JEDEC Standard  
• Fast Read Access Time:  
– Flash EEPROM Pinouts and command sets  
– 55 ns  
– 70 ns  
• Packages Available  
– 32-lead PLCC  
– 32-lead TSOP (8mm x 14mm)  
– 32-pin PDIP  
• Latched Address and Data  
• Automatic Write Timing  
• All devices are RoHS compliant  
– Internal VPP Generation  
www.microchip.com  
©2013 Silicon Storage Technology, Inc.  
DS25022B  
04/13  

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