Datasheet > SST32HF1622C-90-4E-LS

SST32HF1622C-90-4E-LS

更新时间： 2024-11-15 15:52:55

品牌	Logo	应用领域
芯科 - SILICON		静态存储器内存集成电路
页数	文件大小	规格书
37页	427K
描述
Memory Circuit, 1MX16, CMOS, PBGA62, 8 X 10 MM, 1.40 MM HEIGHT, MO-210, LFBGA-62

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SST32HF1622C-90-4E-LS 技术参数

生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	LFBGA,	针数：	62
Reach Compliance Code：	unknown	HTS代码：	8542.32.00.71
风险等级：	5.84	其他特性：	SRAM IS ORGANIZED AS 128K X 16
JESD-30 代码：	R-PBGA-B62	长度：	10 mm
内存密度：	16777216 bit	内存集成电路类型：	MEMORY CIRCUIT
内存宽度：	16	功能数量：	1
端子数量：	62	字数：	1048576 words
字数代码：	1000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-20 °C
组织：	1MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	LFBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE, FINE PITCH	认证状态：	Not Qualified
座面最大高度：	1.4 mm	最大供电电压 (Vsup)：	3.3 V
最小供电电压 (Vsup)：	2.7 V	标称供电电压 (Vsup)：	3 V
表面贴装：	YES	技术：	CMOS
温度等级：	OTHER	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
宽度：	8 mm	Base Number Matches：	1

SST32HF1622C-90-4E-LS 数据手册

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Multi-Purpose Flash Plus + SRAM ComboMemory

SST32HF1642 / SST32HF1682 / SST32HF3242 / SST32HF3282 / SST32HF6482

SST32HF1622C / SST32HF1642C / SST32HF3242C

SST32HF16x2x / 32x2x / 6482x16/32/64Mb Flash + 4/8Mb SRAM, 32Mb Flash + 8Mb SRAM

Preliminary Specifications

(x16) MCP ComboMemories

FEATURES:

•

ComboMemories organized as:

•

Security-ID Feature

– SST32HF1622C: 1M x16 Flash + 128K x16 SRAM

– SST32HF1642x: 1M x16 Flash + 256K x16 SRAM

– SST32HF1682: 1M x16 Flash + 512K x16 SRAM

– SST32HF3242x: 2M x16 Flash + 256K x16 SRAM

– SST32HF3282: 2M x16 Flash + 512K x16 SRAM

– SST32HF6482: 4M x16 Flash + 512K x16 SRAM

Single 2.7-3.3V Read and Write Operations

Concurrent Operation

– Read from or Write to SRAM while

Erase/Program Flash

Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

Low Power Consumption:

– Active Current: 15 mA (typical) for

Flash or SRAM Read

– SST: 128 bits; User: 128 bits

Hardware Block-Protection/WP# Input Pin

– Top Block-Protection (top 32 KWord)

Fast Read Access Times:

– Flash: 70 ns and 90 ns

– SRAM: 70 ns and 90 ns

Latched Address and Data for Flash

Flash Fast Erase and Word-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 40 ms (typical)

– Word-Program Time: 7 µs (typical)

•

Flash Automatic Erase and Program Timing

– Internal V_PPGeneration

Flash End-of-Write Detection

– Standby Current:

– Toggle Bit

– Data# Polling

- SST32HFx2: 60 µA (typical)

- SST32HFx2C: 12 µA (typical)

Flexible Erase Capability

– Uniform 2 KWord sectors

– Uniform 32 KWord size blocks

•

CMOS I/O Compatibility

JEDEC Standard Command Set

Package Available

– 63-ball LFBGA (8mm x 10mm x 1.4mm)

– 62-ball LFBGA (8mm x 10mm x 1.4mm)

– 64-ball LFBGA (8mm x 10mm x 1.4mm)

•

Erase-Suspend/Erase-Resume Capabilities

PRODUCT DESCRIPTION

The SST32HFx2/x2C ComboMemory devices integrate

a CMOS flash memory bank with a CMOS SRAM mem-

ory bank in a Multi-Chip Package (MCP), manufactured

with SST’s proprietary, high performance SuperFlash

technology. The SST32HF16x2/32x2/6482 devices use a

PseudoSRAM. The SST32HF16x2C/3242C devices use

standard SRAM.

signals. The SRAM bank enable signal, BES# selects the

SRAM bank. The flash memory bank enable signal, BEF#

selects the flash memory bank. The WE# signal has to be

used with Software Data Protection (SDP) command

sequence when controlling the Erase and Program opera-

tions in the flash memory bank. The SDP command

sequence protects the data stored in the flash memory

bank from accidental alteration.

Featuring high performance Word-Program, the flash

memory bank provides a maximum Word-Program time of

7 µsec. To protect against inadvertent flash write, the

SST32HFx2/x2C devices contain on-chip hardware and

software data protection schemes. The SST32HFx2/x2C

devices offer a guaranteed endurance of 10,000 cycles.

Data retention is rated at greater than 100 years.

The SST32HFx2/x2C provide the added functionality of

being able to simultaneously read from or write to the

SRAM bank while erasing or programming in the flash

memory bank. The SRAM memory bank can be read or

written while the flash memory bank performs Sector-

Erase, Bank-Erase, or Word-Program concurrently. All

flash memory Erase and Program operations will automati-

cally latch the input address and data signals and complete

the operation in background without further input stimulus

requirement. Once the internally controlled Erase or Pro-

gram cycle in the flash bank has commenced, the SRAM

bank can be accessed for Read or Write.

The SST32HFx2/x2C devices consist of two independent

memory banks with respective bank enable signals. The

Flash and SRAM memory banks are superimposed in the

same memory address space. Both memory banks share

common address lines, data lines, WE# and OE#. The

memory bank selection is done by memory bank enable

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF+ and ComboMemory are trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

S71253-01-000

6/04

12 3 4 5 6 7...37

中文翻译

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与SST32HF1622C-90-4E-LS相关器件

型号	品牌	获取价格	描述	数据表
SST32HF162-70-4C-EK	SST	获取价格	Multi-Purpose Flash (MPF) + SRAM ComboMemory
SST32HF162-70-4C-L3K	ETC	获取价格	MIXED MEMORY\|SRAM+EEPROM\|CMOS\|BGA\|48PIN\|PLASTIC
SST32HF162-70-4C-LBKE	SILICON	获取价格	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA48, 10 X 12 MM, 1.40 MM HEIGHT, MO-210, LBGA-
SST32HF162-70-4C-TBK	SST	获取价格	Multi-Purpose Flash (MPF) + SRAM ComboMemory
SST32HF162-70-4E-EK	SST	获取价格	Multi-Purpose Flash (MPF) + SRAM ComboMemory
SST32HF162-70-4E-L3K	ETC	获取价格	MIXED MEMORY\|SRAM+EEPROM\|CMOS\|BGA\|48PIN\|PLASTIC
SST32HF162-70-4E-LBKE	SILICON	获取价格	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA48, 10 X 12 MM, 1.40 MM HEIGHT, MO-210, LBGA-
SST32HF162-70-4E-TBK	SST	获取价格	Multi-Purpose Flash (MPF) + SRAM ComboMemory
SST32HF162-80-4C-LBKE	SILICON	获取价格	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA48, 10 X 12 MM, 1.40 MM HEIGHT, LBGA-48
SST32HF162-80-4E-LBKE	SILICON	获取价格	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA48, 10 X 12 MM, 1.40 MM HEIGHT, LBGA-48

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