Datasheet > SST32HF162C-70-4E-LBKE

SST32HF162C-70-4E-LBKE

更新时间： 2024-11-15 19:56:31

品牌	Logo	应用领域
芯科 - SILICON		内存集成电路
页数	文件大小	规格书
28页	395K
描述
Memory Circuit, 1MX16, CMOS, PBGA48, 10 X 12 MM, 1.40 MM HEIGHT, MO-210, LBGA-48

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SST32HF162C-70-4E-LBKE 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	LBGA,
针数：	48	Reach Compliance Code：	unknown
HTS代码：	8542.32.00.71	风险等级：	5.84
其他特性：	STATIC RAM IS ORGANIZED AS 128K X 16	JESD-30 代码：	R-PBGA-B48
JESD-609代码：	e1	长度：	12 mm
内存密度：	16777216 bit	内存集成电路类型：	MEMORY CIRCUIT
内存宽度：	16	功能数量：	1
端子数量：	48	字数：	1048576 words
字数代码：	1000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-20 °C
组织：	1MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	LBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified	座面最大高度：	1.4 mm
最大供电电压 (Vsup)：	3.3 V	最小供电电压 (Vsup)：	2.7 V
表面贴装：	YES	技术：	CMOS
温度等级：	OTHER	端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	24
宽度：	10 mm	Base Number Matches：	1

SST32HF162C-70-4E-LBKE 数据手册

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Multi-Purpose Flash Plus + SRAM ComboMemory

SST32HF162C / SST32HF164C / SST32HF324C

SST32HF324 / 32832Mb Flash + 4Mb SRAM, 32Mb Flash + 8Mb SRAM

Preliminary Specifications

(x16) MCP ComboMemories

FEATURES:

•

ComboMemories organized as:

•

Erase-Suspend/Erase-Resume Capabilities

Fast Read Access Times:

– Flash: 70 ns

– SRAM: 70 ns

– SST32HF162C: 1M x16 Flash + 128K x16 SRAM

– SST32HF164C: 1M x16 Flash + 256K x16 SRAM

– SST32HF324C: 2M x16 Flash + 256K x16 SRAM

•

Single 2.7-3.3V Read and Write Operations

Concurrent Operation

•

Latched Address and Data for Flash

Flash Fast Erase and Word-Program:

– Read from or Write to SRAM while

Erase/Program Flash

Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

Low Power Consumption:

– Active Current: 15 mA (typical) for

Flash or SRAM Read

– Standby Current:

- SST32HFx1C: 12 µA (typical)

Flexible Erase Capability

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 40 ms (typical)

– Word-Program Time: 7 µs (typical)

Flash Automatic Erase and Program Timing

– Internal V_PPGeneration

•

Flash End-of-Write Detection

– Toggle Bit

– Data# Polling

•

CMOS I/O Compatibility

JEDEC Standard Command Set

Package Available

•

– Uniform 2 KWord sectors

– Uniform 32 KWord size blocks

– 48-ball LBGA (10mm x 12mm x 1.4mm)

PRODUCT DESCRIPTION

The SST32HF16xC/324C ComboMemory devices inte-

grate a CMOS flash memory bank with a CMOS SRAM

memory bank in a Multi-Chip Package (MCP), manufac-

tured with SST’s proprietary, high performance Super-

Flash technology.

selects the SRAM bank. The flash memory bank enable

signal, BEF# selects the flash memory bank. The WE# sig-

nal has to be used with Software Data Protection (SDP)

command sequence when controlling the Erase and Pro-

gram operations in the flash memory bank. The SDP com-

mand sequence protects the data stored in the flash

memory bank from accidental alteration.

Featuring high performance Word-Program, the flash

memory bank provides a maximum Word-Program time of

7 µsec. To protect against inadvertent flash write, the

SST32HF16xC/324C devices contain on-chip hardware

and software data protection schemes. The

SST32HF16xC/324C devices offer a guaranteed endur-

ance of 10,000 cycles. Data retention is rated at greater

than 100 years.

The SST32HF16xC/324C provide the added functionality

of being able to simultaneously read from or write to the

SRAM bank while erasing or programming in the flash

memory bank. The SRAM memory bank can be read or

written while the flash memory bank performs Sector-

Erase, Bank-Erase, or Word-Program concurrently. All

flash memory Erase and Program operations will automati-

cally latch the input address and data signals and complete

the operation in background without further input stimulus

requirement. Once the internally controlled Erase or Pro-

gram cycle in the flash bank has commenced, the SRAM

bank can be accessed for Read or Write.

The SST32HF16xC/324C devices consist of two indepen-

dent memory banks with respective bank enable signals.

The Flash and SRAM memory banks are superimposed in

the same memory address space. Both memory banks

share common address lines, data lines, WE# and OE#.

The memory bank selection is done by memory bank

enable signals. The SRAM bank enable signal, BES#

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF+ and ComboMemory are trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

S71267-00-000

7/04

12 3 4 5 6 7...28

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与SST32HF162C-70-4E-LBKE相关器件

型号	品牌	获取价格	描述	数据表
SST32HF164	SST	获取价格	Multi-Purpose Flash (MPF) + SRAM ComboMemory
SST32HF1641	SST	获取价格	Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641-70-4C-LFS	SILICON	获取价格	Memory Circuit, 1MX16, CMOS, PBGA63, 8 X 10 MM, 1.40 MM HEIGHT, MO-210, LFBGA-63
SST32HF1641-90-4C-LS	SILICON	获取价格	Memory Circuit, 1MX16, CMOS, PBGA62, 8 X 10 MM, 1.40 MM HEIGHT, MO-210, LFBGA-62
SST32HF1641C	SST	获取价格	Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641C-70-4C-LFS	SILICON	获取价格	Memory Circuit, 1MX16, CMOS, PBGA63, 8 X 10 MM, 1.40 MM HEIGHT, MO-210, LFBGA-63
SST32HF1641C-70-4C-LFSE	SILICON	获取价格	Memory Circuit, 1MX16, CMOS, PBGA63, 8 X 10 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, MO-210, LF
SST32HF1641C-70-4C-LS	SILICON	获取价格	Memory Circuit, 1MX16, CMOS, PBGA62, 8 X 10 MM, 1.40 MM HEIGHT, MO-210, LFBGA-62
SST32HF1641C-70-4C-LSE	SILICON	获取价格	Memory Circuit, 1MX16, CMOS, PBGA62, 8 X 10 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, MO-210, LF
SST32HF1641C-70-4E-LSE	SILICON	获取价格	Memory Circuit, 1MX16, CMOS, PBGA62, 8 X 10 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, MO-210, LF

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