Multi-Purpose Flash (MPF) + SRAM ComboMemory
SST32HF802 / SST32HF162 / SST32HF164
SST32HF802 / 162 / 164MPF (x16) + 1Mb SRAM (x16) ComboMemories
Data Sheet
FEATURES:
•
MPF + SRAM ComboMemory
•
•
Latched Address and Data for Flash
Flash Fast Erase and Word-Program:
– SST32HF802: 512K x16 Flash + 128K x16 SRAM
– SST32HF162: 1M x16 Flash + 128K x16 SRAM
– SST32HF164: 1M x16 Flash + 256K x16 SRAM
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Word-Program Time: 14 µs (typical)
– Chip Rewrite Time:
•
•
Single 2.7-3.3V Read and Write Operations
Concurrent Operation
– Read from or write to SRAM while
Erase/Program Flash
SST32HF802: 8 seconds (typical)
SST32HF162/164: 15 seconds (typical)
Flash Automatic Erase and Program Timing
– Internal VPP Generation
•
•
Superior Reliability
•
•
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Flash End-of-Write Detection
Low Power Consumption:
– Toggle Bit
– Data# Polling
– Active Current: 15 mA (typical) for
Flash or SRAM Read
– Standby Current: 20 µA (typical)
•
•
•
CMOS I/O Compatibility
JEDEC Standard Command Set
Package Available
•
•
Flexible Erase Capability
– Uniform 2 KWord sectors
– Uniform 32 KWord size blocks
– 48-lead TSOP (12mm x 20mm)
– 48-ball TBGA (10mm x 12mm)
Fast Read Access Times:
– Flash: 70 ns and 90 ns
– SRAM: 70 ns and 90 ns
bank enable signal, BEF# selects the flash memory bank.
The WE# signal has to be used with Software Data Protec-
tion (SDP) command sequence when controlling the Erase
and Program operations in the flash memory bank. The
SDP command sequence protects the data stored in the
flash memory bank from accidental alteration.
PRODUCT DESCRIPTION
The SST32HF802/162/164 ComboMemory devices inte-
grate a 512K x16 or 1M x16 CMOS flash memory bank
with a 128K x16 or 256K x16 CMOS SRAM memory bank
in a Multi-Chip Package (MCP), manufactured with SST’s
proprietary, high performance SuperFlash technology.
The SST32HF802/162/164 provide the added functionality
of being able to simultaneously read from or write to the
SRAM bank while erasing or programming in the flash
memory bank. The SRAM memory bank can be read or
written while the flash memory bank performs Sector-
Erase, Bank-Erase, or Word-Program concurrently. All
flash memory Erase and Program operations will automati-
cally latch the input address and data signals and complete
the operation in background without further input stimulus
requirement. Once the internally controlled erase or pro-
gram cycle in the flash bank has commenced, the SRAM
bank can be accessed for read or write.
Featuring high performance Word-Program, the flash
memory bank provides a maximum Word-Program time of
14 µsec. The entire flash memory bank can be erased and
programmed word-by-word in typically 8 seconds for the
SST32HF802 and 15 seconds for the SST32HF162/164,
when using interface features such as Toggle Bit or Data#
Polling to indicate the completion of Program operation. To
protect against inadvertent flash write, the SST32HF802/
162/164 devices contain on-chip hardware and software
data protection schemes.The SST32HF802/162/164
devices offer a guaranteed endurance of 10,000 cycles.
Data retention is rated at greater than 100 years.
The SST32HF802/162/164 devices are suited for applica-
tions that use both flash memory and SRAM memory to
store code or data. For systems requiring low power and
small form factor, the SST32HF802/162/164 devices signif-
icantly improve performance and reliability, while lowering
power consumption, when compared with multiple chip
solutions. The SST32HF802/162/164 inherently use less
energy during erase and program than alternative flash
The SST32HF802/162/164 devices consist of two inde-
pendent memory banks with respective bank enable sig-
nals. The Flash and SRAM memory banks are
superimposed in the same memory address space. Both
memory banks share common address lines, data lines,
WE# and OE#. The memory bank selection is done by
memory bank enable signals. The SRAM bank enable sig-
nal, BES# selects the SRAM bank. The flash memory
©2001 Silicon Storage Technology, Inc.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF and ComboMemory are trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
S71171-05-000 8/01
1
520
5秒后页面跳转
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
