Multi-Purpose Flash (MPF) + SRAM ComboMemory
SST32HF162 / SST32HF164
SST32HF162 / 16416Mb Flash + 2Mb SRAM, 16Mb Flash + 4Mb SRAM
(x16) MCP ComboMemories
Data Sheet
FEATURES:
•
MPF + SRAM ComboMemory
•
•
Latched Address and Data for Flash
Flash Fast Erase and Word-Program:
– SST32HF162: 1M x16 Flash + 128K x16 SRAM
– SST32HF164: 1M x16 Flash + 256K x16 SRAM
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Word-Program Time: 14 µs (typical)
– Chip Rewrite Time:
SST32HF162/164: 15 seconds (typical)
Flash Automatic Erase and Program Timing
– Internal VPP Generation
•
•
Single 2.7-3.3V Read and Write Operations
Concurrent Operation
– Read from or write to SRAM while
Erase/Program Flash
•
•
Superior Reliability
•
•
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Flash End-of-Write Detection
Low Power Consumption:
– Toggle Bit
– Data# Polling
– Active Current: 15 mA (typical) for
Flash or SRAM Read
– Standby Current: 20 µA (typical)
•
•
•
CMOS I/O Compatibility
JEDEC Standard Command Set
Package Available
•
•
Flexible Erase Capability
– Uniform 2 KWord sectors
– Uniform 32 KWord size blocks
– 48-ball LBGA (10mm x 12mm)
Fast Read Access Times:
– Flash: 70 ns and 80 ns
– SRAM: 70 ns and 80 ns
selects the flash memory bank. The WE# signal has to be
used with Software Data Protection (SDP) command
sequence when controlling the Erase and Program opera-
tions in the flash memory bank. The SDP command
sequence protects the data stored in the flash memory
bank from accidental alteration.
PRODUCT DESCRIPTION
The SST32HF162/164 ComboMemory devices integrate a
1M x16 CMOS flash memory bank with a 128K x16 or
256K x16 CMOS SRAM memory bank in a Multi-Chip
Package (MCP), manufactured with SST’s proprietary, high
performance SuperFlash technology.
The SST32HF162/164 provide the added functionality of
being able to simultaneously read from or write to the
SRAM bank while erasing or programming in the flash
memory bank. The SRAM memory bank can be read or
written while the flash memory bank performs Sector-
Erase, Bank-Erase, or Word-Program concurrently. All
flash memory Erase and Program operations will automati-
cally latch the input address and data signals and complete
the operation in background without further input stimulus
requirement. Once the internally controlled Erase or Pro-
gram cycle in the flash bank has commenced, the SRAM
bank can be accessed for Read or Write.
Featuring high performance Word-Program, the flash
memory bank provides a maximum Word-Program time of
14 µsec. The entire flash memory bank can be erased and
programmed word-by-word in 15 seconds (typically) for the
SST32HF162/164, when using interface features such as
Toggle Bit or Data# Polling to indicate the completion of
Program operation. To protect against inadvertent flash
write, the SST32HF162/164 devices contain on-chip hard-
ware and software data protection schemes. The
SST32HF162/164 devices offer a guaranteed endurance
of 10,000 cycles. Data retention is rated at greater than 100
years.
The SST32HF162/164 devices are suited for applications
that use both flash memory and SRAM memory to store
code or data. For systems requiring low power and small
form factor, the SST32HF162/164 devices significantly
improve performance and reliability, while lowering power
consumption, when compared with multiple chip solutions.
The SST32HF162/164 inherently use less energy during
erase and program than alternative flash technologies. The
The SST32HF162/164 devices consist of two independent
memory banks with respective bank enable signals. The
Flash and SRAM memory banks are superimposed in the
same memory address space. Both memory banks share
common address lines, data lines, WE# and OE#. The
memory bank selection is done by memory bank enable
signals. The SRAM bank enable signal, BES# selects the
SRAM bank. The flash memory bank enable signal, BEF#
©2003 Silicon Storage Technology, Inc.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF and ComboMemory are trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
S71171-07-000
1
4/03
5秒后页面跳转
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
