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SST29SF020-55-4C-WHE

更新时间： 2024-11-10 20:13:07
品牌 Logo 应用领域
芯科 - SILICON 光电二极管内存集成电路
页数 文件大小 规格书
25页 311K
描述
Flash, 256KX8, 55ns, PDSO32, 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32

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SST29SF020-55-4C-WHE 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：TSOP1包装说明：TSOP1, TSSOP32,.56,20
针数：32Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.71最长访问时间：55 ns
命令用户界面：NO数据轮询：YES
JESD-30 代码：R-PDSO-G32JESD-609代码：e3
长度：12.4 mm内存密度：2097152 bit
内存集成电路类型：FLASH内存宽度：8
功能数量：1部门数/规模：2K
端子数量：32字数：262144 words
字数代码：256000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：256KX8封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装等效代码：TSSOP32,.56,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
电源：5 V编程电压：5 V
认证状态：Not Qualified座面最大高度：1.2 mm
部门规模：128最大待机电流：0.0001 A
子类别：Flash Memories最大压摆率：0.02 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：MATTE TIN端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40切换位：YES
类型：NOR TYPE宽度：8 mm
Base Number Matches：1

SST29SF020-55-4C-WHE 数据手册

 浏览型号SST29SF020-55-4C-WHE的Datasheet PDF文件第2页浏览型号SST29SF020-55-4C-WHE的Datasheet PDF文件第3页浏览型号SST29SF020-55-4C-WHE的Datasheet PDF文件第4页浏览型号SST29SF020-55-4C-WHE的Datasheet PDF文件第5页浏览型号SST29SF020-55-4C-WHE的Datasheet PDF文件第6页浏览型号SST29SF020-55-4C-WHE的Datasheet PDF文件第7页 
2 Mbit / 4 Mbit (x8) Small-Sector Flash  
SST29SF020 / SST29SF040  
SST29VF020 / SST29VF040  
SST29SF/VF020 / 0402Mb / 4Mb (x8)  
Byte-Program, Small-Sector flash memories  
Data Sheet  
FEATURES:  
•
•
Organized as 256K x8 / 512K x8  
Single Voltage Read and Write Operations  
– 4.5-5.5V for SST29SF020/040  
– 2.7-3.6V for SST29VF020/040  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Low Power Consumption:  
– Active Current: 10 mA (typical)  
– Standby Current:  
•
Fast Erase and Byte-Program:  
– Sector-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– Chip Rewrite Time:  
4 seconds (typical) for SST29SF/VF020  
8 seconds (typical) for SST29SF/VF040  
Automatic Write Timing  
– Internal VPP Generation  
End-of-Write Detection  
•
•
•
•
– Toggle Bit  
– Data# Polling  
30 µA (typical) for SST29SF020/040  
1 µA (typical) for SST29VF020/040  
•
•
•
TTL I/O Compatibility for SST29SF020/040  
CMOS I/O Compatibility for SST29VF020/040  
JEDEC Standard  
•
•
Sector-Erase Capability  
– Uniform 128 Byte sectors  
Fast Read Access Time:  
– Flash EEPROM Pinouts and command sets  
Packages Available  
– 32-lead PLCC  
– 32-lead TSOP (8mm x 14mm)  
All non-Pb (lead-free) devices are RoHS compliant  
– 55 ns for SST29SF020/040  
– 70 ns for SST29VF020/040  
Latched Address and Data  
•
•
•
PRODUCT DESCRIPTION  
The SST29SF020/040 and SST29VF020/040 are 256K  
x8 / 512K x8 CMOS Small-Sector Flash (SSF) manufac-  
tured with SST’s proprietary, high-performance CMOS  
SuperFlash technology. The split-gate cell design and  
thick-oxide tunneling injector attain better reliability and  
manufacturability compared with alternate approaches.  
The SST29SF020/040 devices write (Program or Erase)  
with a 4.5-5.5V power supply. The SST29VF020/040  
devices write (Program or Erase) with a 2.7-3.6V power  
supply. These devices conform to JEDEC standard pin  
assignments for x8 memories.  
ory. For all system applications, they significantly improve  
performance and reliability, while lowering power consump-  
tion. They inherently use less energy during Erase and  
Program than alternative flash technologies. The total  
energy consumed is a function of the applied voltage, cur-  
rent, and time of application. Since for any given voltage  
range, the SuperFlash technology uses less current to pro-  
gram and has a shorter erase time, the total energy con-  
sumed during any Erase or Program operation is less than  
alternative flash technologies. They also improve flexibility  
while lowering the cost for program, data, and configuration  
storage applications.  
Featuring high performance Byte-Program, the  
SST29SF020/040 and SST29VF020/040 devices pro-  
vide a maximum Byte-Program time of 20 µsec. To protect  
against inadvertent write, they have on-chip hardware and  
Software Data Protection schemes. Designed, manufac-  
tured, and tested for a wide spectrum of applications, these  
devices are offered with a guaranteed endurance of at least  
10,000 cycles. Data retention is rated at greater than 100  
years.  
The SuperFlash technology provides fixed Erase and Pro-  
gram times independent of the number of Erase/Program  
cycles that have occurred. Therefore, the system software  
or hardware does not have to be modified or de-rated as is  
necessary with alternative flash technologies, whose Erase  
and Program times increase with accumulated Erase/Pro-  
gram cycles.  
To meet high density, surface mount requirements, the  
SST29SF020/040 and SST29VF020/040 devices are  
offered in 32-lead PLCC and 32-lead TSOP packages. The  
pin assignments are shown in Figures 1 and 2.  
The SST29SF020/040 and SST29VF020/040 devices  
are suited for applications that require convenient and eco-  
nomical updating of program, configuration, or data mem-  
©2005 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
SSF is a trademark of Silicon Storage Technology, Inc.  
S71160-12-000  
1
11/05  
These specifications are subject to change without notice.  
1234567...25

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SST29SF020-70-4C-NH SST

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