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SST29SF040-55-4I-NH

更新时间： 2024-09-21 20:24:59
品牌 Logo 应用领域
芯科 - SILICON 内存集成电路
页数 文件大小 规格书
24页 270K
描述
Flash, 512KX8, 55ns, PQCC32, PLASTIC, MS-016AE, LCC-32

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SST29SF040-55-4I-NH 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：QFJ包装说明：QCCJ, LDCC32,.5X.6
针数：32Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.8最长访问时间：55 ns
数据轮询：YESJESD-30 代码：R-PQCC-J32
JESD-609代码：e0长度：13.97 mm
内存密度：4194304 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
部门数/规模：4K端子数量：32
字数：524288 words字数代码：512000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：512KX8
封装主体材料：PLASTIC/EPOXY封装代码：QCCJ
封装等效代码：LDCC32,.5X.6封装形状：RECTANGULAR
封装形式：CHIP CARRIER并行/串行：PARALLEL
峰值回流温度（摄氏度）：240电源：5 V
编程电压：5 V认证状态：Not Qualified
座面最大高度：3.556 mm部门规模：128
最大待机电流：0.0001 A子类别：Flash Memories
最大压摆率：0.03 mA最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：J BEND端子节距：1.27 mm
端子位置：QUAD处于峰值回流温度下的最长时间：10
切换位：YES类型：NOR TYPE
宽度：11.43 mmBase Number Matches：1

SST29SF040-55-4I-NH 数据手册

 浏览型号SST29SF040-55-4I-NH的Datasheet PDF文件第2页浏览型号SST29SF040-55-4I-NH的Datasheet PDF文件第3页浏览型号SST29SF040-55-4I-NH的Datasheet PDF文件第4页浏览型号SST29SF040-55-4I-NH的Datasheet PDF文件第5页浏览型号SST29SF040-55-4I-NH的Datasheet PDF文件第6页浏览型号SST29SF040-55-4I-NH的Datasheet PDF文件第7页 
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash  
SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040  
SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040  
SST29SF/VF512 / 010 / 020 / 0405.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) Byte-Program, Small Erase Sector flash memories  
Preliminary Specifications  
FEATURES:  
•
•
Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8  
Single Voltage Read and Write Operations  
•
Fast Erase and Byte-Program:  
– Sector-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– Chip Rewrite Time:  
– 5.0V-only for SST29SF512/010/020/040  
– 2.7-3.6V for SST29VF512/010/020/040  
•
•
Superior Reliability  
1 second (typical) for SST29SF/VF512  
2 seconds (typical) for SST29SF/VF010  
4 seconds (typical) for SST29SF/VF020  
8 seconds (typical) for SST29SF/VF040  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Low Power Consumption:  
•
•
Automatic Write Timing  
– Internal VPP Generation  
End-of-Write Detection  
– Active Current: 10 mA (typical)  
– Standby Current:  
30 µA (typical) for SST29SF512/010/020/040  
1 µA (typical) for SST29VF512/010/020/040  
– Toggle Bit  
– Data# Polling  
•
•
Sector-Erase Capability  
– Uniform 128 Byte sectors  
Fast Read Access Time:  
•
•
•
TTL I/O Compatibility for SST29SFxxx  
CMOS I/O Compatibility for SST29VFxxx  
JEDEC Standard  
– 55 ns  
– 70 ns  
– Flash EEPROM Pinouts and command sets  
Packages Available  
•
Latched Address and Data  
•
– 32-pin PLCC  
– 32-pin TSOP (8mm x 14mm)  
– 32-pin PDIP  
PRODUCT DESCRIPTION  
The SST29SF512/010/020/040 and SST29VF512/010/  
020/040 are 64K x8 / 128K x8 / 256K x8 / 512K x8 CMOS  
Small-Sector Flash (SSF) manufactured with SST’s propri-  
etary, high performance CMOS SuperFlash technology.  
The split-gate cell design and thick oxide tunneling injector  
attain better reliability and manufacturability compared with  
alternate approaches. The SST29SFxxx devices write  
(Program or Erase) with a 4.5-5.5V power supply. The  
SST29VFxxx devices write (Program or Erase) with a 2.7-  
3.6V power supply. These devices conform to JEDEC stan-  
dard pinouts for x8 memories.  
and reliability, while lowering power consumption. They  
inherently use less energy during Erase and Program than  
alternative flash technologies. The total energy consumed  
is a function of the applied voltage, current, and time of  
application. Since for any given voltage range, the Super-  
Flash technology uses less current to program and has a  
shorter erase time, the total energy consumed during any  
Erase or Program operation is less than alternative flash  
technologies. They also improve flexibility while lowering  
the cost for program, data, and configuration storage appli-  
cations.  
Featuring high performance Byte-Program, the  
SST29SFxxx and SST29VFxxx devices provide a maxi-  
mum Byte-Program time of 20 µsec. To protect against  
inadvertent write, they have on-chip hardware and Soft-  
ware Data Protection schemes. Designed, manufactured,  
and tested for a wide spectrum of applications, these  
devices are offered with a guaranteed endurance of at least  
10,000 cycles. Data retention is rated at greater than 100  
years.  
The SuperFlash technology provides fixed Erase and Pro-  
gram times, independent of the number of Erase/Program  
cycles that have occurred. Therefore the system software  
or hardware does not have to be modified or de-rated as is  
necessary with alternative flash technologies, whose Erase  
and Program times increase with accumulated Erase/Pro-  
gram cycles.  
To meet high density, surface mount requirements, the  
SST29SFxxx and SST29VFxxx devices are offered in 32-  
pin PLCC and 32-pin TSOP packages. A 600 mil, 32-pin  
PDIP is also offered for SST29SFxxx devices. See Figures  
1, 2, and 3 for pinouts.  
The SST29SFxxx and SST29VFxxx devices are suited for  
applications that require convenient and economical updat-  
ing of program, configuration, or data memory. For all sys-  
tem applications, they significantly improve performance  
©2001 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
SSF is a trademark of Silicon Storage Technology, Inc.  
S71160-05-000 5/01  
1
505  
These specifications are subject to change without notice.  
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