Datasheet > SST29SF020-55-4I-NHE

SST29SF020-55-4I-NHE

更新时间： 2024-09-21 04:50:39

品牌	Logo	应用领域
SST		闪存内存集成电路
页数	文件大小	规格书
25页	395K
描述
2 Mbit / 4 Mbit (x8) Small-Sector Flash

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2 Mbit / 4 Mbit (x8) Small-Sector Flash

SST29SF020 / SST29SF040

SST29VF020 / SST29VF040

SST29SF/VF020 / 0402Mb / 4Mb (x8)

Byte-Program, Small-Sector flash memories

Data Sheet

FEATURES:

•

Organized as 256K x8 / 512K x8

Single Voltage Read and Write Operations

– 4.5-5.5V for SST29SF020/040

– 2.7-3.6V for SST29VF020/040

Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

Low Power Consumption:

– Active Current: 10 mA (typical)

– Standby Current:

•

Fast Erase and Byte-Program:

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

4 seconds (typical) for SST29SF/VF020

8 seconds (typical) for SST29SF/VF040

Automatic Write Timing

– Internal V_PPGeneration

End-of-Write Detection

•

– Toggle Bit

– Data# Polling

30 µA (typical) for SST29SF020/040

1 µA (typical) for SST29VF020/040

•

TTL I/O Compatibility for SST29SF020/040

CMOS I/O Compatibility for SST29VF020/040

JEDEC Standard

•

Sector-Erase Capability

– Uniform 128 Byte sectors

Fast Read Access Time:

– Flash EEPROM Pinouts and command sets

Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

All non-Pb (lead-free) devices are RoHS compliant

– 55 ns for SST29SF020/040

– 70 ns for SST29VF020/040

Latched Address and Data

•

PRODUCT DESCRIPTION

The SST29SF020/040 and SST29VF020/040 are 256K

x8 / 512K x8 CMOS Small-Sector Flash (SSF) manufac-

tured with SST’s proprietary, high-performance CMOS

SuperFlash technology. The split-gate cell design and

thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

The SST29SF020/040 devices write (Program or Erase)

with a 4.5-5.5V power supply. The SST29VF020/040

devices write (Program or Erase) with a 2.7-3.6V power

supply. These devices conform to JEDEC standard pin

assignments for x8 memories.

ory. For all system applications, they significantly improve

performance and reliability, while lowering power consump-

tion. They inherently use less energy during Erase and

Program than alternative flash technologies. The total

energy consumed is a function of the applied voltage, cur-

rent, and time of application. Since for any given voltage

range, the SuperFlash technology uses less current to pro-

gram and has a shorter erase time, the total energy con-

sumed during any Erase or Program operation is less than

alternative flash technologies. They also improve flexibility

while lowering the cost for program, data, and configuration

storage applications.

Featuring high performance Byte-Program, the

SST29SF020/040 and SST29VF020/040 devices pro-

vide a maximum Byte-Program time of 20 µsec. To protect

against inadvertent write, they have on-chip hardware and

Software Data Protection schemes. Designed, manufac-

tured, and tested for a wide spectrum of applications, these

devices are offered with a guaranteed endurance of at least

10,000 cycles. Data retention is rated at greater than 100

years.

The SuperFlash technology provides fixed Erase and Pro-

gram times independent of the number of Erase/Program

cycles that have occurred. Therefore, the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet high density, surface mount requirements, the

SST29SF020/040 and SST29VF020/040 devices are

offered in 32-lead PLCC and 32-lead TSOP packages. The

pin assignments are shown in Figures 2 and 3.

The SST29SF020/040 and SST29VF020/040 devices

are suited for applications that require convenient and eco-

nomical updating of program, configuration, or data mem-

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

SSF is a trademark of Silicon Storage Technology, Inc.

S71160-13-000

10/06

These specifications are subject to change without notice.

12 3 4 5 6 7...25

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与SST29SF020-55-4I-NHE相关器件

型号	品牌	获取价格	描述	数据表
SST29SF020-55-4I-PH	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash
SST29SF020-55-4I-WH	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash
SST29SF020-55-4I-WH	SILICON	获取价格	Flash, 256KX8, 55ns, PDSO32, 8 X 14 MM, MO-142BA, TSOP1-32
SST29SF020-55-4I-WHE	SST	获取价格	2 Mbit / 4 Mbit (x8) Small-Sector Flash
SST29SF020-70-4C-NH	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash
SST29SF020-70-4C-NH	SILICON	获取价格	Flash, 256KX8, 70ns, PQCC32, PLASTIC, LCC-32
SST29SF020-70-4C-PH	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash
SST29SF020-70-4C-WH	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash
SST29SF020-70-4C-WH	SILICON	获取价格	Flash, 256KX8, 70ns, PDSO32, 8 X 14 MM, TSOP1-32
SST29SF020-70-4I-NH	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash

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