Datasheet > SST175

SST175

更新时间： 2024-11-25 22:21:19

品牌	Logo	应用领域
Linear Systems		晶体开关晶体管光电二极管瞄准线
页数	文件大小	规格书
2页	223K
描述
SINGLE P-CHANNEL JFET SWITCH

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中文翻译

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数据手册

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SST175 数据手册

J/SST174 SERIES

SINGLE P-CHANNEL

JFET SWITCH

Linear Integrated Systems

FEATURES

Direct Replacement For SILICONIX J/SST174 SERIES

LOW ON RESISTANCE

LOW GATE OPERATING CURRENT

ABSOLUTE MAXIMUM RATINGS¹

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

Junction Operating Temperature

Maximum Power Dissipation

Continuous Power Dissipation

Maximum Currents

r_DS(on)≤ 85Ω

I_D(off)= 10pA

J SERIES

TO-92

BOTTOM VIEW

SST SERIES

SOT-23

TOP VIEW

-55 to 150°C

-55 to 135°C

350mW

Gate Current

I_G= -50mA

Maximum Voltages

Gate to Drain Voltage

Gate to Source Voltage

V_GDS= 30V

V_GSS= 30V

COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

BV_GSS

V_GS(F)

I_GSS

CHARACTERISTIC

MIN TYP MAX UNITS CONDITIONS

Gate to Source Breakdown Voltage

Gate to Source Forward Voltage

Gate Reverse Current

Gate Operating Current

Drain Cutoff Current

I_G= 1µA, V_DS= 0V

-0.7

0.01

-0.01

I_G= -1mA, V_DS= 0V

V_GS= 20V, V_DS= 0V

V_DG= -15V, I_D= -1mA

V_DS= -15V, V_GS= 10V

I_G

I_D(off)

-1

SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

J/SST174

J/SST175

J/SST176

J/SST177

SYMBOL CHARACTERISTIC

UNITS CONDITIONS

MIN MAX MIN MAX MIN MAX MIN MAX

Gate to Source

V_GS(off)

0.8

2.25

-20

Ω

V_DS= -15V, I_D= -10nA

Cutoff Voltage

Drain to Source

I_DSS

-20 -135

-7

-70

125

-2

-35

250

-1.5

V_DS= -15V, V_GS= 0V

V_GS= 0V, V_DS= -0.1V

Saturation Current

Drain to Source

r_DS(on)

300

On Resistance

Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

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