Datasheet > SST175(SOT-23)

SST175(SOT-23)

更新时间： 2024-11-26 15:52:55

品牌	Logo	应用领域
MICROSS		/
页数	文件大小	规格书
1页	295K
描述
Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SST175(SOT-23) 数据手册

SST175

P-CHANNEL JFET

Linear Systems replaces discontinued Siliconix SST175

The SST175 is a single P-Channel JFET switch

FEATURES

This p-channel analog switch is designed to provide low

DIRECT REPLACEMENT FOR SILICONIX SST175

LOW ON RESISTANCE

LOW GATE OPERATING CURRENT

FAST SWITCHING

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted)

on-resistance and fast switching. When used in

combination with the complimentary J/SST111 n-

channel family, the SST175 simplifies series-shunt

switching applications

r_DS(on)≤ 125Ω

I_D(off)= 10pA

t_(ON)25ns

SST175 Benefits:

Low Error Voltage

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

MAXIMUM CURRENT

High-Speed Analog Circuit Performance

Negligible “Off-Error,” Excellent Accuracy

Good Frequency Response

‐55°C to +150°C

‐55°C to +135°C

Eliminates Additional Buffering

350mW

SST175 Applications:

Gate Current (Note 1)

MAXIMUM VOLTAGES

Gate to Drain Voltage

I_G= ‐50mA

Analog Switches

Choppers

Sample-and-Hold

Normally “On” Switches

Current Limiters

V_GDS= 30V

V_GSS= 30V

Gate to Source Voltage

SST175 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_GSS

V_GS(F)

V_GS(off)

I_DSS

CHARACTERISTIC

MIN

‐‐

‐7

‐‐

TYP.

‐‐

‐0.7

‐‐

0.01

MAX

‐‐

‐70

UNITS

CONDITIONS

Gate to Source Breakdown Voltage

Gate to Source Forward Voltage

Gate to Source Cutoff Voltage

Drain to Source Saturation Current

Gate Reverse Current

I_G= ‐1µA, V_DS= 0V

I_G= ‐1mA, V_DS= 0V

V_DS= ‐15V, I_D= ‐10nA

V_DS= ‐15V, V_GS= 0V

V_GS= 20V, V_DS= 0V

V_DG= ‐15V, I_D= ‐1mA

I_GSS

I_G

Gate Operating Current

‐‐

Click To Buy

I_D(off)

r_DS(on)

Drain Cutoff Current

Drain to Source On Resistance

‐‐

‐0.01

‐‐

‐1

125

V_DS= ‐15V, V_GS= 0V

V_GS= 0V, V_DS= ‐0.1V

SST175 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

t_d(on)

t_r

CHARACTERISTIC

UNITS

CONDITIONS

Turn On Time

V_GS(L) = 0V

V_GS(H) = 10V

Turn On Rise Time

Turn Off Time

t_d(off)

t_f

See Switching Circuit

Turn Off Fall Time

Note 1 ‐ Absolute maximum ratings are limiting values above which SST175 serviceability may be impaired.

SST175 SWITCHING CIRCUIT PARAMETERS

SWITCHING CIRCUIT

SOT-23 (Top View)

V_DD

V_GG

R_L

‐6V

12V

750Ω

220Ω

‐7mA

R_G

I_D(on)

Micross Components Europe

Available Packages:

SST175 in SOT-23

SST175 in bare die.

Tel: +44 1603 788967

Please contact Micross for full

package and die dimensions

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed

for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise

under any patent or patent rights of Linear Integrated Systems.

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx

中文翻译

下载PDF

与SST175(SOT-23)相关器件

型号	品牌	获取价格	描述	数据表
SST175_SOT-23	MICROSS	获取价格	a single P-Channel JFET switch
SST175-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, P-Channel, Junction FET
SST175T	TEMIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236,
SST175-T1	VISHAY	获取价格	Small Signal Field-Effect Transistor, P-Channel, Junction FET
SST175T2	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET
SST175-T2	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A
SST175T-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236,
SST175TT1	TEMIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236,
SST175TT1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A
SST175TT2	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A

与SST175(SOT-23)相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

SST175(SOT-23)

SST175(SOT-23) 数据手册

与SST175(SOT-23)相关器件

与SST175(SOT-23)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SST175(SOT-23)

SST175(SOT-23) 数据手册

与SST175(SOT-23)相关器件

与SST175(SOT-23)相关文章

您还可以找

您在本页遇到什么问题？