是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.11 |
Is Samacsys: | N | 其他特性: | LOW INSERTION LOSS |
配置: | SINGLE | 最大漏源导通电阻: | 300 Ω |
FET 技术: | JUNCTION | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 135 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 0.36 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Small Signal |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SST177_SOT-23 | MICROSS |
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a single P-Channel JFET switch | |
SST177-E3 | VISHAY |
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Small Signal Field-Effect Transistor, P-Channel, Junction FET | |
SST177-LF | CALOGIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, PLASTIC | |
SST177T | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236, | |
SST177T | TEMIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236, | |
SST177T1 | CALOGIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, PLASTIC | |
SST177-T1 | VISHAY |
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Small Signal Field-Effect Transistor, P-Channel, Junction FET | |
SST177-T1-E3 | VISHAY |
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Small Signal Field-Effect Transistor, P-Channel, Junction FET | |
SST177T2 | CALOGIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET | |
SST177-T2 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A |