生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.95 |
风险等级: | 5.12 | Is Samacsys: | N |
配置: | SINGLE | 最大漏源导通电阻: | 300 Ω |
FET 技术: | JUNCTION | 最大反馈电容 (Crss): | 5.5 pF |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 135 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SST177-T2 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A | |
SST177T-E3 | VISHAY |
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TRANSISTOR P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236, TO-236, 3 PIN, FET General Purpose S | |
SST177-TO-92-3L | Linear |
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Small Signal Field-Effect Transistor, P-Channel, Junction FET, | |
SST177TT1 | TEMIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236, | |
SST177TT1 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A | |
SST177TT1-E3 | VISHAY |
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TRANSISTOR P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, LEAD FREE, TO-236, 3 PIN, FET Gene | |
SST177TT2 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A | |
SST177TT2-E3 | VISHAY |
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TRANSISTOR P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, LEAD FREE, TO-236, 3 PIN, FET Gene | |
SST-1801-G-02-L | SAMTEC |
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IC Socket, SIP18, 18 Contact(s) | |
SST-1801-G-10-L | SAMTEC |
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IC Socket, SIP18, 18 Contact(s) |