Datasheet > SST175_SOT-23

SST175_SOT-23

更新时间： 2024-11-26 09:04:35

品牌	Logo	应用领域
MICROSS		开关
页数	文件大小	规格书
1页	296K
描述
a single P-Channel JFET switch

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SST175_SOT-23 数据手册

SST175

P-CHANNEL JFET

Linear Systems replaces discontinued Siliconix SST175

The SST175 is a single P-Channel JFET switch

FEATURES

This p-channel analog switch is designed to provide low

DIRECT REPLACEMENT FOR SILICONIX SST175

LOW ON RESISTANCE

LOW GATE OPERATING CURRENT

FAST SWITCHING

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted)

on-resistance and fast switching. When used in

combination with the complimentary J/SST111 n-

channel family, the SST175 simplifies series-shunt

switching applications

r_DS(on)≤ 125Ω

I_D(off)= 10pA

t_(ON)25ns

SST175 Benefits:

Low Error Voltage

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

MAXIMUM CURRENT

High-Speed Analog Circuit Performance

Negligible “Off-Error,” Excellent Accuracy

Good Frequency Response

‐55°C to +150°C

‐55°C to +135°C

Eliminates Additional Buffering

350mW

SST175 Applications:

Gate Current (Note 1)

MAXIMUM VOLTAGES

Gate to Drain Voltage

I_G= ‐50mA

Analog Switches

Choppers

Sample-and-Hold

Normally “On” Switches

Current Limiters

V_GDS= 30V

V_GSS= 30V

Gate to Source Voltage

SST175 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_GSS

V_GS(F)

V_GS(off)

I_DSS

CHARACTERISTIC

MIN

‐‐

‐7

‐‐

TYP.

‐‐

‐0.7

‐‐

0.01

MAX

‐‐

‐70

UNITS

CONDITIONS

Gate to Source Breakdown Voltage

Gate to Source Forward Voltage

Gate to Source Cutoff Voltage

Drain to Source Saturation Current

Gate Reverse Current

I_G= ‐1µA, V_DS= 0V

I_G= ‐1mA, V_DS= 0V

V_DS= ‐15V, I_D= ‐10nA

V_DS= ‐15V, V_GS= 0V

V_GS= 20V, V_DS= 0V

V_DG= ‐15V, I_D= ‐1mA

I_GSS

I_G

Gate Operating Current

‐‐

Click To Buy

I_D(off)

r_DS(on)

Drain Cutoff Current

Drain to Source On Resistance

‐‐

‐0.01

‐‐

‐1

125

V_DS= ‐15V, V_GS= 0V

V_GS= 0V, V_DS= ‐0.1V

SST175 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

t_d(on)

t_r

CHARACTERISTIC

UNITS

CONDITIONS

Turn On Time

V_GS(L) = 0V

V_GS(H) = 10V

Turn On Rise Time

Turn Off Time

t_d(off)

t_f

See Switching Circuit

Turn Off Fall Time

Note 1 ‐ Absolute maximum ratings are limiting values above which SST175 serviceability may be impaired.

SST175 SWITCHING CIRCUIT PARAMETERS

SWITCHING CIRCUIT

SOT-23 (Top View)

V_DD

V_GG

R_L

‐6V

12V

750Ω

220Ω

‐7mA

R_G

I_D(on)

Micross Components Europe

Available Packages:

SST175 in SOT-23

SST175 in bare die.

Tel: +44 1603 788967

Please contact Micross for full

package and die dimensions

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed

for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise

under any patent or patent rights of Linear Integrated Systems.

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx

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与SST175_SOT-23相关器件

型号	品牌	获取价格	描述	数据表
SST175-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, P-Channel, Junction FET
SST175T	TEMIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236,
SST175-T1	VISHAY	获取价格	Small Signal Field-Effect Transistor, P-Channel, Junction FET
SST175T2	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET
SST175-T2	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A
SST175T-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236,
SST175TT1	TEMIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236,
SST175TT1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A
SST175TT2	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A
SST175TT2-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A

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