是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | HTS代码: | 8541.21.00.95 |
风险等级: | 5.25 | Is Samacsys: | N |
其他特性: | LOW INSERTION LOSS | 配置: | SINGLE |
最大漏源导通电阻: | 125 Ω | FET 技术: | JUNCTION |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 135 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 0.36 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Small Signal | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SST175(SOT-23) | MICROSS |
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Transistor | |
SST175_SOT-23 | MICROSS |
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a single P-Channel JFET switch | |
SST175-E3 | VISHAY |
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Small Signal Field-Effect Transistor, P-Channel, Junction FET | |
SST175T | TEMIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236, | |
SST175-T1 | VISHAY |
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Small Signal Field-Effect Transistor, P-Channel, Junction FET | |
SST175T2 | CALOGIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET | |
SST175-T2 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A | |
SST175T-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236, | |
SST175TT1 | TEMIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236, | |
SST175TT1 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A |