Datasheet > SSM6N17FU(TE85L,F)

SSM6N17FU(TE85L,F)

更新时间： 2024-01-02 17:05:30

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	117K
描述
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,50V V(BR)DSS,100MA I(D),SOT-363

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SSM6N17FU(TE85L,F) 数据手册

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SSM6N17FU

Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)

Characteristics

Gate leakage current

Symbol

Test Condition

Min

Typ.

Max

Unit

= ±7 V, V = 0

―

0.9

―

±5

―

μA

GSS

Drain-Source breakdown voltage

Drain cut-off current

= 0.1 mA, V

= 0

(BR) DSS

= 50 V, V

μA

DSS

Gate threshold voltage

= 3 V, I = 1 μA

1.5

―

Forward transfer admittance

⏐Y ⏐

= 3 V, I = 10 mA

= 10 mA, V

= 4 V

Drain-Source ON resistance

Ω

DS (ON)

= 10 mA, V

= 2.5 V

Input capacitance

iss

= 3 V, V

= 0, f = 1 MHz

Reverse transfer capacitance

Output capacitance

rss

oss

Turn-on time

Switching time

= 3 V, I = 20 mA,

100

= 0~3 V, R = 10 Ω,

Turn-off time

R = 150 Ω

off

Switching Time Test Circuit

(a) Test circuit

(b) V

3 V

0 V

OUT

90%

3 V

10 Ω

10%

1 μs

OUT

10%

90%

= 3 V

Duty 1%

: t , t < 5 ns

DS (ON)

out

= 50 Ω)

Common source

Ta = 25°C

off

2007-11-01

123 4 5

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