Datasheet > SSM6K804R

SSM6K804R

更新时间： 2024-01-22 18:18:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	416K
描述
N-ch, MOSFET, 40V, 12A, 18mΩ@4.5V, TSOP6F

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中文翻译

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数据手册

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SSM6K804R 数据手册

SSM6K804R

5. Electrical Characteristics

5.1. Static Characteristics (Unless otherwise specified, Ta = 25 ꢀ)

Characteristics

Gate leakage current

Symbol

Test Condition

Min

Typ.

Max

Unit

IGSS

IDSS

VDS = 0 V, VGS = ±20 V

ꢁ

±100

µA

Drain cut-off current

VDS = 40 V, VGS = 0 V

Drain-source breakdown voltage

Gate threshold voltage

V(BR)DSS ID = 10 mA, VGS = 0 V

1.4

ꢁ

(Note 1) V(BR)DSX ID = 10 mA, VGS = -20 V

ꢁ

(Note 2)

Vth

VDS = 10 V, ID = 0.1 mA

2.4

Drain-source on-resistance

(Note 3) RDS(ON) ID = 4 A, VGS = 4.5 V

ID = 4 A, VGS = 10 V

mΩ

ꢁ

Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-

source breakdown voltage is lowered in this mode.

Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (0.1 mA for

this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be

lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).

Take this into consideration when using the device.

Note 3: Pulse measurement.

5.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25 ꢀ)

Characteristics

Input capacitance

Symbol

Test Condition

Min

Typ.

Max

Unit

Ciss

Crss

Coss

ton

VDS = 20 V , VGS = 0 V,

f = 1 MHz

ꢁ

1110

ꢁ

Reverse transfer capacitance

Output capacitance

245

Switching time (turn-on time)

VDD = 20 V, ID = 1 A,

VGS = 0 to 4.5 V, RG = 30 Ω

Duty ≤ 1 %, Input tr, tf < 5 ns,

Ground source, see Chapter

5.3

Switching time (turn-off time)

toff

ꢁ

5.3. Switching Time Test Circuit

Fig. 5.3.1 Switching Time Test Circuit

Fig. 5.3.2 Input Waveform/Output Waveform

5.4. Gate Charge Characteristics (Unless otherwise specified, Ta = 25 ꢀ)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Total gate charge (gate-source plus gate-drain)

Gate-source charge 1

Qgs1

Qgd

VDD = 20 V, ID = 12 A,

VGS = 4.5 V

ꢁ

7.5

2.9

2.8

ꢁ

Gate-drain charge

Toshiba Electronic Devices & Storage Corporation

2021-10-28

Rev.1.0

1 234 5 6 7...9

中文翻译

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