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SSM6K804R PDF预览

SSM6K804R

更新时间: 2024-01-22 18:18:47
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 416K
描述
N-ch, MOSFET, 40V, 12A, 18mΩ@4.5V, TSOP6F

SSM6K804R 数据手册

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SSM6K804R  
5. Electrical Characteristics  
5.1. Static Characteristics (Unless otherwise specified, Ta = 25 )  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
IGSS  
IDSS  
VDS = 0 V, VGS = ±20 V  
12  
9
±100  
1
nA  
µA  
V
Drain cut-off current  
VDS = 40 V, VGS = 0 V  
Drain-source breakdown voltage  
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS ID = 10 mA, VGS = 0 V  
40  
37  
1.4  
(Note 1) V(BR)DSX ID = 10 mA, VGS = -20 V  
(Note 2)  
Vth  
VDS = 10 V, ID = 0.1 mA  
2.4  
18  
12  
Drain-source on-resistance  
(Note 3) RDS(ON) ID = 4 A, VGS = 4.5 V  
ID = 4 A, VGS = 10 V  
mΩ  
Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-  
source breakdown voltage is lowered in this mode.  
Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (0.1 mA for  
this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be  
lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).  
Take this into consideration when using the device.  
Note 3: Pulse measurement.  
5.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25 )  
Characteristics  
Input capacitance  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
pF  
Ciss  
Crss  
Coss  
ton  
VDS = 20 V , VGS = 0 V,  
f = 1 MHz  
1110  
26  
Reverse transfer capacitance  
Output capacitance  
245  
24  
Switching time (turn-on time)  
VDD = 20 V, ID = 1 A,  
VGS = 0 to 4.5 V, RG = 30 Ω  
Duty 1 %, Input tr, tf < 5 ns,  
Ground source, see Chapter  
5.3  
ns  
Switching time (turn-off time)  
toff  
35  
5.3. Switching Time Test Circuit  
Fig. 5.3.1 Switching Time Test Circuit  
Fig. 5.3.2 Input Waveform/Output Waveform  
5.4. Gate Charge Characteristics (Unless otherwise specified, Ta = 25 )  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
nC  
Total gate charge (gate-source plus gate-drain)  
Gate-source charge 1  
Qg  
Qgs1  
Qgd  
VDD = 20 V, ID = 12 A,  
VGS = 4.5 V  
7.5  
2.9  
2.8  
Gate-drain charge  
©2019-2021  
Toshiba Electronic Devices & Storage Corporation  
2021-10-28  
Rev.1.0  
3

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