Datasheet > SSM3J144TU

SSM3J144TU

更新时间： 2023-12-20 18:45:58

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	269K
描述
P-ch MOSFET, -20 V, -3.2 A, 0.093 Ω@4.5V, SOT-323F(UFM)

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SSM3J144TU 数据手册

SSM3J144TU

6. Electrical Characteristics

6.1. Static Characteristics (Ta = 25ꢁ unless otherwise specified)

Characteristics

Gate leakage current

Symbol

Test Condition

Min

Typ.

Max

Unit

IGSS

IDSS

VGS = -8/+6 V, VDS = 0 V

VDS = -20 V, VGS = 0 V

ꢀ

±1

-1

µA

Drain cut-off current

Drain-source breakdown voltage

Gate threshold voltage

V(BR)DSS ID = -1 mA, VGS = 0 V

-20

-15

-0.3

ꢀ

(Note 1) V(BR)DSX ID = -1 mA, VGS = 5 V

ꢀ

(Note 2)

Vth

VDS = -3 V, ID = -1 mA

ꢀ

-1.0

Drain-source on-resistance

(Note 3) RDS(ON) ID = -1.5 A, VGS = -4.5 V

ID = -1.0 A, VGS = -2.5 V

78.5

97.5

120

141

5.8

mΩ

ꢀ

123

168

240

ꢀ

ID = -0.5 A, VGS = -1.8 V

ꢀ

ID = -0.25 A, VGS = -1.5 V

ꢀ

Forward transfer admittance

(Note 3)

|Yfs|

VDS = -3 V, ID = -1.0 A

2.9

Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-

source breakdown voltage is lowered in this mode.

Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (-1 mA for

this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be

lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).

Take this into consideration when using the device.

Note 3: Pulse measurement.

6.2. Dynamic Characteristics (Ta = 25ꢁ unless otherwise specified)

Characteristics

Input capacitance

Symbol

Test Condition

Min

Typ.

Max

Unit

Ciss

Crss

Coss

ton

VDS = -10 V, VGS = 0 V,

f = 1 MHz

ꢀ

290

ꢀ

Reverse transfer capacitance

Output capacitance

Switching time (turn-on time)

VDD = -10 V, ID = -0.5 A

VGS = 0 to -2.5 V, RG = 4.7 Ω

Duty ≤ 1%, Input: tr, tf < 5 ns

Common source

Switching time (turn-off time)

toff

ꢀ

46.2

ꢀ

6.3. Switching Time Test Circuit

Fig. 6.3.1 Test Circuit of Switching Time

Fig. 6.3.2 Input Waveform/Output Waveform

Toshiba Electronic Devices & Storage Corporation

2021-06-25

Rev.2.0

1 234 5 6 7...9

下载PDF

与SSM3J144TU相关器件

型号	品牌	描述	获取价格	数据表
SSM3J145TU	TOSHIBA	P-ch MOSFET, -20 V, -3.0 A, 0.103 Ω@4.5V, SOT	获取价格
SSM3J14T	TOSHIBA	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)	获取价格
SSM3J14T(T5LPAS,E)	TOSHIBA	Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal	获取价格
SSM3J14T(TE85L)	TOSHIBA	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2.7A I(D),SOT-346	获取价格
SSM3J14T(TE85L,F)	TOSHIBA	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2.7A I(D),SOT-346	获取价格
SSM3J14T(TE85LF)	TOSHIBA	Small Signal Field-Effect Transistor	获取价格