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SSC53LHE3/57T PDF预览

SSC53LHE3/57T

更新时间: 2024-10-28 06:14:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 106K
描述
High-Current Density Surface Mount Schottky Rectifier

SSC53LHE3/57T 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:ROHS COMPLIANT, PLASTIC, SMC, 2 PINReach Compliance Code:compliant
风险等级:5.68其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.45 VJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:175 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
参考标准:AEC-Q101最大重复峰值反向电压:30 V
最大反向电流:700 µA子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30

SSC53LHE3/57T 数据手册

 浏览型号SSC53LHE3/57T的Datasheet PDF文件第2页浏览型号SSC53LHE3/57T的Datasheet PDF文件第3页浏览型号SSC53LHE3/57T的Datasheet PDF文件第4页 
New Product  
SSC53L & SSC54  
Vishay General Semiconductor  
High-Current Density Surface Mount Schottky Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Very low forward voltage drop  
• High surge capability  
DO-214AB (SMC)  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, dc-to-dc converters, and polarity  
protection applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
5.0 A  
30 V, 40 V  
175 A  
MECHANICAL DATA  
Case: DO-214AB (SMC)  
VF  
0.38 V, 0.42 V  
150 °C  
TJ max.  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
SSC53L  
53L  
30  
SSC54  
S54  
40  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
A
21  
28  
Maximum DC blocking voltage  
Maximum average forward rectified current at TL (Fig. 1)  
30  
40  
IF(AV)  
5.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
175  
A
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dV/dt  
TJ  
10 000  
V/µs  
°C  
- 65 to + 150  
- 65 to + 150  
TSTG  
°C  
Document Number: 88885  
Revision: 19-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

SSC53LHE3/57T 替代型号

型号 品牌 替代类型 描述 数据表
SSC53LHE3_A/H VISHAY

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Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 30V V(RRM), Silicon, DO-214AB, ROHS COM

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