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SSC54E3 PDF预览

SSC54E3

更新时间: 2024-10-28 14:44:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 315K
描述
DIODE 5 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN, Rectifier Diode

SSC54E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AB
包装说明:LEAD FREE, PLASTIC, SMC, 2 PIN针数:2
Reach Compliance Code:unknown风险等级:5.65
Base Number Matches:1

SSC54E3 数据手册

 浏览型号SSC54E3的Datasheet PDF文件第2页浏览型号SSC54E3的Datasheet PDF文件第3页浏览型号SSC54E3的Datasheet PDF文件第4页 
SSC53L & SSC54  
Vishay General Semiconductor  
New Product  
High-current Density Surface Mount Schottky Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
5.0 A  
30 V, 40 V  
175 A  
VF  
0.38 V, 0.42 V  
150 °C  
Tj max.  
DO-214AB (SMC)  
Features  
Mechanical Data  
• Low profile package  
Case: DO-214AB (SMC)  
• Ideal for automated placement  
Epoxy meets UL 94V-0 Flammability rating  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Very low forward voltage drop  
• High surge capability  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes the cathode end  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in low voltage high frequency inverters, free  
wheeling, dc-to-dc converters, and polarity protection  
applications  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Device marking code  
Symbol  
SSC53L  
53L  
SSC54  
S54  
Unit  
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
30  
40  
V
V
V
A
A
Maximum RMS voltage  
21  
30  
28  
40  
Maximum DC blocking voltage  
Maximum average forward rectified current at TL (See Fig. 1)  
IF(AV)  
IFSM  
5.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
175  
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dv/dt  
TJ  
10000  
V/µs  
°C  
- 65 to + 150  
- 65 to + 150  
TSTG  
°C  
Document Number 88885  
24-Oct-05  
www.vishay.com  
1

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