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SS9012GJ18Z PDF预览

SS9012GJ18Z

更新时间: 2024-11-16 07:11:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
4页 58K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN

SS9012GJ18Z 数据手册

 浏览型号SS9012GJ18Z的Datasheet PDF文件第2页浏览型号SS9012GJ18Z的Datasheet PDF文件第3页浏览型号SS9012GJ18Z的Datasheet PDF文件第4页 
SS9012  
1W Output Amplifier of Potable Radios in  
Class B Push-pull Operation.  
High total power dissipation. (P =625mW)  
T
High Collector Current. (I = -500mA)  
C
Complementary to SS9013  
Excellent h linearity.  
FE  
TO-92  
1. Emitter 2. Base 3. Collector  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-40  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-20  
V
CEO  
EBO  
-5  
V
I
-500  
625  
A
C
P
Collector Dissipation  
Junction Temperature  
Storage Temperature  
W
C
T
T
150  
°C  
°C  
J
-55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise notedꢀ  
a
Symbol  
Parameter  
Test Condition  
Min.  
-40  
-20  
-5  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
I
= -100µA, I =0  
V
V
CBO  
CEO  
EBO  
C
C
E
E
BV  
BV  
= -1mA, I =0  
B
= -100µA, I =0  
V
C
I
I
V
V
= -25V, I =0  
-100  
-100  
202  
nA  
nA  
CBO  
EBO  
CB  
EB  
E
Emitter Cut-off Current  
= -3V, I =0  
C
h
h
DC Current Gain  
V
V
= -1V, I = -50mA  
64  
40  
120  
90  
FE1  
FE2  
CE  
CE  
C
= -1V, I = -500mA  
C
V
V
V
(sat)  
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I
I
= -500mA, I = -50mA  
-0.18  
-0.95  
-0.67  
-0.6  
-1.2  
-0.7  
V
V
V
CE  
BE  
BE  
C
C
B
= -500mA, I = -50mA  
B
V
= -1V, I = -10mA  
-0.6  
CE  
C
h
Classification  
FE  
Classification  
D
E
F
G
H
h
64 ~ 91  
78 ~ 112  
96 ~ 135  
112 ~ 166  
144 ~ 202  
FE1  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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