Datasheet > SS9013FJ05Z

SS9013FJ05Z

更新时间： 2024-11-16 10:15:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	68K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN

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SS9013FJ05Z 数据手册

SS9013

NPN EPITAXIAL SILICON TRANSISTOR

1W OUTPUT AMPLIFIER OF POTABLE

RADIOS IN CLASS

TO-92

B PUSH-PULL OPERATION.

· High total power dissipation. (P_T=625mW)

· High Collector Current. (I_C=500mA)

· Complementary to SS9012

· Excellent h_FElinearity.

ABSOLUTE MAXIMUM RATINGS (T_A=25°C)

Characteristic

Symbol

Rating

Unit

°C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

V_CBO

V_CEO

V_EBO

I_C

P_C

T_J

500

625

150

-55 ~ 150

T_STG

1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (T_A=25°C)

Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

I_C=100mA, I_E=0

I_C=1mA, I_B=0

I_E=100mA, I_C=0

V_CB=25V, I_E=0

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

BV_CBO

BV_CEO

BV_EBO

I_CBO

I_EBO

h_FE1

100

202

V_EB=3V, I_C=0

V_CE=1V, I_C=50mA

V_CE=1V, I_C=500mA

I_C=500mA, I_B=50mA

V_CE=1V, I_C=10mA

120

0.16

0.91

0.67

h_FE2

V_CE(sat)

V_BE(sat)

V_BE(on)

0.6

1.2

0.7

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

0.6

h_FECLASSIFICATION

Classification

h_FE(1)

64-91

78-112

96-135

112-166

144-202

Rev. B

ã 1999 Fairchild Semiconductor Corporation

12 3

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