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SS9013GBU PDF预览

SS9013GBU

更新时间: 2024-11-15 13:14:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
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4页 41K
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SS9013GBU 数据手册

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SS9013  
1W Output Amplifier of Potable Radios in  
Class B Push-pull Operation.  
High total power dissipation. (P =625mW)  
T
High Collector Current. (I =500mA)  
C
Complementary to SS9012  
Excellent h linearity.  
FE  
TO-92  
1. Emitter 2. Base 3. Collector  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
40  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
20  
V
CEO  
EBO  
5
V
I
500  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
625  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
40  
20  
5
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
=100µA, I =0  
V
V
CBO  
CEO  
EBO  
C
C
E
BV  
BV  
=1mA, I =0  
B
I =100µA, I =0  
V
E
C
I
I
V
=25V, I =0  
100  
100  
202  
nA  
nA  
CBO  
EBO  
CB  
EB  
E
Emitter Cut-off Current  
V
=3V, I =0  
C
h
h
DC Current Gain  
V
V
=1V, I =50mA  
64  
40  
120  
120  
FE1  
FE2  
CE  
CE  
C
=1V, I =500mA  
C
V
V
V
(sat)  
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I
I
=500mA, I =50mA  
0.16  
0.91  
0.67  
0.6  
1.2  
0.7  
V
V
V
CE  
BE  
BE  
C
C
B
=500mA, I =50mA  
B
V
=1V, I =10mA  
0.6  
CE  
C
h
Classification  
FE  
Classification  
D
E
F
G
H
h
64 ~ 91  
78 ~ 112  
96 ~ 135  
112 ~ 166  
144 ~ 202  
FE1  
©2002 Fairchild Semiconductor Corporation  
Rev. A3, May 2002  

SS9013GBU 替代型号

型号 品牌 替代类型 描述 数据表
SS9013GTA FAIRCHILD

完全替代

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

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