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SS9013HJ05Z PDF预览

SS9013HJ05Z

更新时间: 2024-11-15 14:44:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
3页 68K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN

SS9013HJ05Z 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.69
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):144JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

SS9013HJ05Z 数据手册

 浏览型号SS9013HJ05Z的Datasheet PDF文件第2页浏览型号SS9013HJ05Z的Datasheet PDF文件第3页 
SS9013  
NPN EPITAXIAL SILICON TRANSISTOR  
1W OUTPUT AMPLIFIER OF POTABLE  
RADIOS IN CLASS  
TO-92  
B PUSH-PULL OPERATION.  
· High total power dissipation. (PT=625mW)  
· High Collector Current. (IC=500mA)  
· Complementary to SS9012  
· Excellent hFE linearity.  
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
Characteristic  
Symbol  
Rating  
Unit  
V
V
V
mA  
mW  
°C  
°C  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
VCBO  
VCEO  
VEBO  
IC  
PC  
TJ  
40  
20  
5
500  
625  
150  
-55 ~ 150  
TSTG  
1. Emitter 2. Base 3. Collector  
ELECTRICAL CHARACTERISTICS (TA=25°C)  
Characteristic  
Symbol  
Test Conditions  
Min  
40  
20  
5
Typ  
Max  
Unit  
IC =100mA, IE =0  
IC =1mA, IB =0  
IE =100mA, IC =0  
VCB =25V, IE =0  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
BVCBO  
BVCEO  
BVEBO  
ICBO  
IEBO  
hFE1  
V
V
V
nA  
nA  
100  
100  
202  
VEB =3V, IC =0  
VCE =1V, IC =50mA  
VCE =1V, IC =500mA  
IC =500mA, IB =50mA  
IC =500mA, IB =50mA  
VCE =1V, IC =10mA  
120  
120  
0.16  
0.91  
0.67  
64  
40  
hFE2  
VCE (sat)  
VBE (sat)  
VBE (on)  
0.6  
1.2  
0.7  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
V
V
V
0.6  
hFE CLASSIFICATION  
Classification  
D
E
F
G
H
hFE(1)  
64-91  
78-112  
96-135  
112-166  
144-202  
Rev. B  
ã 1999 Fairchild Semiconductor Corporation  

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