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SS3H9HE3-57T PDF预览

SS3H9HE3-57T

更新时间: 2024-11-23 11:57:31
品牌 Logo 应用领域
威世 - VISHAY 高压
页数 文件大小 规格书
4页 95K
描述
High-Voltage Surface Mount Schottky Rectifier

SS3H9HE3-57T 数据手册

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New Product  
SS3H9 & SS3H10  
Vishay General Semiconductor  
High-Voltage Surface Mount Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High surge capability  
DO-214AB (SMC)  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Solder dip 260 °C 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, dc-to-dc converters, and polarity  
protection applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
3.0 A  
VRRM  
IFSM  
VF  
90 V, 100 V  
100 A  
MECHANICAL DATA  
Case: DO-214AB (SMC)  
0.65 V  
IR  
20 µA  
Epoxy meets UL 94V-0 flammability rating  
TJ max.  
175 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
SS3H9  
MS9  
90  
SS3H10  
MS10  
100  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
Maximum average forward rectified current at: TL = 115 °C  
VRRM  
VRWM  
VDC  
V
V
V
A
90  
100  
90  
100  
IF(AV)  
3.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
100  
A
Peak repetitive reverse surge current at tp = 2.0 µs, 1 kHz  
Critical rate of rise of reverse voltage  
IRRM  
dV/dt  
1.0  
A
10 000  
V/µs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
Document Number: 88752  
Revision: 19-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
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