New Product
SS3H9 & SS3H10
Vishay General Semiconductor
High-Voltage Surface Mount Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High surge capability
DO-214AB (SMC)
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity
protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
IFSM
VF
90 V, 100 V
100 A
MECHANICAL DATA
Case: DO-214AB (SMC)
0.65 V
IR
20 µA
Epoxy meets UL 94V-0 flammability rating
TJ max.
175 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
SS3H9
MS9
90
SS3H10
MS10
100
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at: TL = 115 °C
VRRM
VRWM
VDC
V
V
V
A
90
100
90
100
IF(AV)
3.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Peak repetitive reverse surge current at tp = 2.0 µs, 1 kHz
Critical rate of rise of reverse voltage
IRRM
dV/dt
1.0
A
10 000
V/µs
°C
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
Document Number: 88752
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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