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SS3H9-M3 PDF预览

SS3H9-M3

更新时间: 2024-11-24 01:24:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 91K
描述
Ideal for automated placement

SS3H9-M3 数据手册

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SS3H9-M3, SS3H10-M3  
Vishay General Semiconductor  
www.vishay.com  
High-Voltage Surface Mount Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-214AB (SMC)  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
VF  
3.0 A  
90 V, 100 V  
100 A  
MECHANICAL DATA  
0.65 V  
Case: DO-214AB (SMC)  
Molding compound meets UL 94 V-0 flammability rating  
IR  
20 μA  
TJ max.  
175 °C  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
Package  
DO-214AB (SMC)  
Single die  
commercial grade  
Diode variation  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 2 whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS3H9  
MS9  
90  
SS3H10  
MS10  
100  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
Maximum average forward rectified current at: TL = 115 °C  
VRRM  
VRWM  
VDC  
V
V
V
A
90  
100  
90  
100  
IF(AV)  
3.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
100  
A
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz  
Critical rate of rise of reverse voltage  
IRRM  
dV/dt  
1.0  
A
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-65 to +175  
Revision: 09-Dec-13  
Document Number: 89497  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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