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SS3P3-HE3/84A PDF预览

SS3P3-HE3/84A

更新时间: 2024-11-20 14:44:59
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线光电二极管
页数 文件大小 规格书
4页 353K
描述
3A, 30V, SILICON, RECTIFIER DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN

SS3P3-HE3/84A 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:DO-220AA包装说明:R-PDSO-F2
针数:2Reach Compliance Code:unknown
风险等级:5.66Is Samacsys:N
其他特性:FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-220AA
JESD-30 代码:R-PDSO-F2JESD-609代码:e3
湿度敏感等级:NOT SPECIFIED最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:30 V
表面贴装:YES技术:SCHOTTKY
端子面层:MATTE TIN端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

SS3P3-HE3/84A 数据手册

 浏览型号SS3P3-HE3/84A的Datasheet PDF文件第2页浏览型号SS3P3-HE3/84A的Datasheet PDF文件第3页浏览型号SS3P3-HE3/84A的Datasheet PDF文件第4页 
SS3P3  
Vishay General Semiconductor  
New Product  
High Current Density Surface Mount  
Schottky Barrier Rectifiers  
FEATURES  
• Very low profile - typical height of 1.0 mm  
• Ideal for automated placement  
• Low forward voltage drop, low power losses  
• High efficiency  
• Low thermal resistance  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
DO-220AA (SMP)  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters, free-  
wheeling, dc-to-dc converters and polarity protection  
applications.  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
3 A  
30 V  
MECHANICAL DATA  
50 A  
Case: DO-220AA (SMP)  
Epoxy meets UL 94V-0 flammability rating  
EAS  
11.25 mJ  
0.43 V  
150 °C  
VF  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
Tj max.  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise specified)  
A
PARAMETER  
SYMBOL  
SS3P3  
33  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (see Fig. 1)  
VRRM  
IF(AV)  
30  
V
A
3.0  
Peak forward surge current 8.3 ms single half sine-wave superimposed  
on rated load  
IFSM  
50  
A
Non-repetitive avalanche energy at 25 °C, IAS = 1.5 A, L = 10 mH  
Voltage rate of change (rated VR)  
EAS  
11.25  
10000  
mJ  
V/µs  
°C  
dv/dt  
Operating junction and storage temperature range  
T
J, TSTG  
- 55 to + 150  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP  
MAX.  
UNIT  
Maximum instantaneous  
forward voltage (1)  
at IF = 3 A,  
at IF = 3 A,  
TJ = 25 °C  
TJ = 125 °C  
0.52  
0.43  
0.58  
0.48  
VF  
V
Maximum reverse current at  
rated VR  
TJ = 25 °C  
TJ = 125 °C  
-
200  
20  
µA  
mA  
IR  
(1)  
9.0  
Typical junction capacitance  
at 4.0 V, 1 MHz  
CJ  
130  
pF  
Document Number 88944  
07-Feb-06  
www.vishay.com  
1

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