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SS34S-M3/61T PDF预览

SS34S-M3/61T

更新时间: 2024-11-25 20:04:51
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线光电二极管
页数 文件大小 规格书
4页 74K
描述
DIODE RECTIFIER DIODE, Rectifier Diode

SS34S-M3/61T 技术参数

生命周期:Active包装说明:R-PDSO-C2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.59
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.65 V
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
最大非重复峰值正向电流:35 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:40 V最大反向电流:200 µA
表面贴装:YES技术:SCHOTTKY
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

SS34S-M3/61T 数据手册

 浏览型号SS34S-M3/61T的Datasheet PDF文件第2页浏览型号SS34S-M3/61T的Datasheet PDF文件第3页浏览型号SS34S-M3/61T的Datasheet PDF文件第4页 
SS32S, SS33S, SS34S  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Schottky Barrier Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Low forward voltage drop, low power losses  
• High efficiency  
• High surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
DO-214AC (SMA)  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
PRIMARY CHARACTERISTICS  
Note  
IF(AV)  
3.0 A  
These devices are not AEC-Q101 qualified  
VRRM  
IFSM  
20 V, 30 V, 40 V  
35 A  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3 - RoHS-compliant, commercial grade  
VF at IF = 3.0 A  
TJ max.  
0.61 V  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS32S  
32S  
SS33S  
33S  
30  
SS34S  
34S  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (fig. 1)  
VRRM  
IF(AV)  
20  
40  
V
A
3.0  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
35  
A
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Revision: 27-Mar-12  
Document Number: 89927  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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