Datasheet > SS35

SS35

更新时间： 2024-11-07 11:45:23

品牌	Logo	应用领域
台芯 - TAYCHIPST		肖特基二极管
页数	文件大小	规格书
2页	1427K
描述
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

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SS35 数据手册

SS32 THRU SS310

20V-100V 3.0A

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

Features

For surface mounted application

Metal to silicon rectifier, majority carrier conduction

Low forward voltage drop

Easy pick and place

High surge current capability

Plastic material used carriers Underwriters

Laboratory Classification 94V-0

Epitaxial construction

High temperature soldering:

260^oC / 10 seconds at terminals

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

I_O

Average Rectified Current

@ T_A= 75°C

3.0

Peak Forward Surge Current

i_f(surge)

8.3 ms single half-sine-wave

Superimposed on rated load (JEDEC method)

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient**

100

P_D

2.27

mW/°C

°C/W

R_θJA

R_θJC

T_stg

T_J

Thermal Resistance, Junction to Case

Storage Temperature Range

°C/W

°C

-55 to +150

Operating Junction Temperature

°C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Device mounted on FR-4 PCB 0.55 x 0.55" (14 x 14 mm).

Electrical Characteristics

T_A= 25°C unless otherwise noted

Parameter

Device

Units

310

100

Peak Repetitive Reverse Voltage

Maximum RMS Voltage

100

DC Reverse Voltage (Rated V_R)

Maximum Reverse Current T_A= 25°C

0.5

@ rated V_R

T_A= 100°C

Maximum Forward Voltage @ 3.0 A

500

750

850

E-mail: sales@taychipst.com

Web Site: www.taychipst.com

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