Datasheet > SS35

SS35

更新时间： 2024-09-16 22:21:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	85K
描述
3.0 Ampere Schottky Barrier Rectifiers

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中文翻译

获取价格

数据手册
替代型号

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SS35 数据手册

SS32 - S310

0.280 (7.112)

0.260 (6.604)

Features

0.124 (3.150)

0.108 (2.743)

• Metal to silicon rectifiers, majority

carrier conduction.

0.245 (6.223)

0.220 (5.588)

• Low forward voltage drop.

• Easy pick and place.

0.320 (8.128)

0.305 (7.747)

SMC/DO-214AB

0.103 (2.616)

0.079 (2.007)

• High surge current capability.

0.060 (1.524)

0.030 (0.762)

0.008 (0.203)

0.004 (0.102)

0.012 (0.305)

0.006 (0.152)

3.0 Ampere Schottky Barrier Rectifiers

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

I_O

Average Rectified Current

@ T_A= 75°C

3.0

Peak Forward Surge Current

i_f(surge)

8.3 ms single half-sine-wave

Superimposed on rated load (JEDEC method)

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient**

100

P_D

2.27

mW/°C

°C/W

R_θJA

R_θJC

T_stg

T_J

Thermal Resistance, Junction to Case

Storage Temperature Range

°C/W

°C

-55 to +150

Operating Junction Temperature

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

**Device mounted on FR-4 PCB 0.55 x 0.55" (14 x 14 mm).

Electrical Characteristics

T_A= 25°C unless otherwise noted

Parameter

Device

Units

310

100

Peak Repetitive Reverse Voltage

Maximum RMS Voltage

100

DC Reverse Voltage (Rated V_R)

Maximum Reverse Current T_A= 25°C

0.5

@ rated V_R

T_A= 100°C

Maximum Forward Voltage @ 3.0 A

500

750

850

1999 Fairchild Semiconductor Corporation

SS32 - S310, Rev. B1

12 3 4

中文翻译

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SS35 替代型号

型号	品牌	替代类型	描述	数据表
SS35-E3/57T	VISHAY	完全替代	DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN,
SS35	ONSEMI	类似代替	3.0A肖特基势垒整流器
SS35-E3	VISHAY	功能相似	DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN, Recti

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