Datasheet > SS35

SS35

更新时间： 2024-09-17 06:13:55

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描述
SCHOTTKY BARRIER RECTIFIERS

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SS35 数据手册

SS32-SS315

SCHOTTKY BARRIER RECTIFIERS

PRODUCT SUMMARY

3.0 AMPS Surface Mount

SMC/DO-214AB

.126(3.20)

.114(2.90)

FEATURES

.245(6.22)

.220(5.59)

For surface mounted application

Easy pick and place

Metal to silicon rectifier, majority carrier conduction

Low power loss, high efficiency

.280(7.11)

.260(6.60)

.012(.31)

.006(.15)

High current capability, low VF

High surge current capability

.103(2.62)

.079(2.00)

Plastic material used carriers Underwriters

Laboratory Classification 94V-0

Epitaxial construction

.008(.20)

.004(.10)

.063(1.6)

.039(1.0)

High temperature soldering:

260^oC / 10 seconds at terminals

.320(8.13)

.305(7.75)

Dimensions in inches and (millimeters)

MECANICAL DATA

Case: JEDEC DO-214AB Molded plastic

Terminals: Pure tin plated, lead free.

Polarity: Indicated by cathode band

Pb-free; RoHS-compliant

Packaging: 16mm tape per EIA STD RS-481

Weight: 0.21gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Symbol SS SS SS SS SS SS SS SS

Type Number

Units

39 310 315

90 100 150

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

70 105

Maximum DC Blocking Voltage

90 100 150

Maximum Average Forward Rectified

Current at T_L(See Fig. 1)

3.0

I_(AV)

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method )

100

I_FSM

Maximum Instantaneous Forward Voltage

(Note 1)

IF= 3.0A @ 25 C

V_F

0.5

0.4

0.75

0.65

0.85

0.70

0.1

0.5

0.95

0.80

@ 100 C

0.5

Maximum DC Reverse Current @ T =25 C at

I_R

Rated DC Blocking Voltage

@ T =125 C

Typical Thermal Resistance ( Note 2 )

θJL

C/W

θJA

Operating Temperature Range

Storage Temperature Range

T_J

-55 to +125

-55 to +150

TSTG

Notes:

1. Pulse Test with PW=300 usec, 1% Duty Cycle

04/05/2007 Rev.1.00

www.SiliconStandard.com

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