Datasheet > SS29

SS29

更新时间： 2024-11-09 06:13:55

品牌	Logo	应用领域
SSC		二极管光电二极管
页数	文件大小	规格书
2页	232K
描述
SCHOTTKY BARRIER RECTIFIERS

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中文翻译

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数据手册

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SS29 数据手册

SS22-SS215

SCHOTTKY BARRIER RECTIFIERS

PRODUCT SUMMARY

2.0 AMPS Surface Mount

SMB/DO-214AA

FEATURES

.083(2.10)

.077(1.95)

For surface mounted application

Easy pick and place

.147(3.73)

.137(3.48)

Metal to silicon rectifier, majority carrier conduction

Low power loss, high efficiency

High current capability, low VF

High surge current capability

.187(4.75)

.167(4.25)

.012(.31)

.006(.15)

Plastic material used carriers Underwriters

Laboratory Classification 94V-0

Epitaxial construction

.103(2.61)

.078(1.99)

.012(.31)

.006(.15)

.056(1.41)

.035(0.90)

.008(.20)

.004(.10)

High temperature soldering:

260^oC / 10 seconds at terminals

.209(5.30)

.201(5.10)

MECANICAL DATA

Dimensions in inches and (millimeters)

Case: Molded plastic

Terminals: Pure tin plated, lead free.

Polarity: Indicated by cathode band

Packaging: 12mm tape per EIA STD RS-481

Pb-free; RoHS-compliant

Weight: 0.093gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

^oC ambient temperature unless otherwise specified.

Ratings at 25

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Symbol SS SS SS SS SS SS SS SS

Type Number

Units

29 210 215

90 100 150

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

70 105

Maximum DC Blocking Voltage

90 100 150

Maximum Average Forward Rectified Current

at T_L(See Fig. 1)

2.0

I_(AV)

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method )

I_FSM

Maximum Instantaneous Forward Voltage

0.5

0.4

0.70

0.65

0.85

0.70

0.1

0.95

0.80

(Note 1)

IF= 2.0A @ 25 C

V_F

@ 100 C

0.4

Maximum DC Reverse Current @ T =25 C at

I_R

Rated DC Blocking Voltage @ T =125 C

5.0

Typical Junction Capacitance (Note 3)

Typical Thermal Resistance ( Note 2 )

130

θJL

C/W

θJA

Operating Temperature Range

Storage Temperature Range

T_J

-65 to +125

-65 to +150

T^STG

Notes:

1. Pulse Test with PW=300 usec, 1% Duty Cycle

2. Measured on P.C.Board with 0.4” x 0.4”(10mm x 10mm) Copper Pad Areas.

3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.

04/05/2007 Rev.1.00

www.SiliconStandard.com

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