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SS29-E3 PDF预览

SS29-E3

更新时间: 2024-11-20 21:15:07
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线光电二极管
页数 文件大小 规格书
4页 284K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.5A, 90V V(RRM), Silicon, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN

SS29-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-214AA包装说明:R-PDSO-C2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.6其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:75 A元件数量:1
相数:1端子数量:2
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:90 V表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

SS29-E3 数据手册

 浏览型号SS29-E3的Datasheet PDF文件第2页浏览型号SS29-E3的Datasheet PDF文件第3页浏览型号SS29-E3的Datasheet PDF文件第4页 
SS29 & SS210  
Vishay General Semiconductor  
High Voltage Surface Mount Schottky Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
2.0 A  
90 V, 100 V  
75 A  
VF  
0.71 V  
Tj max.  
150 °C  
DO-214AA (SMB)  
Features  
Typical Applications  
• Low profile package  
For use in low voltage high frequency inverters, free-  
wheeling, dc-to-dc converters, and polarity protection  
applications  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
Mechanical Data  
Case: DO-214AA (SMB)  
Epoxy meets UL 94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
• High surge capability  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
E3 suffix for commercial grade  
Polarity: Color band denotes the cathode end  
Maximum Ratings  
TA = 25 °C unless otherwise specified#  
Parameter  
Device marking code  
Symbol  
SS29  
S9  
SS210  
S10  
Unit  
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
90  
100  
V
V
V
A
A
Maximum RMS voltage  
63  
90  
70  
Maximum DC blocking voltage  
100  
Maximum average forward rectified current at TL = 90 °C  
IF(AV)  
IFSM  
1.5  
75  
Peak forward surge current 8.3ms single half sine-wave  
superimposed on rated load  
Peak repetitive reverse surge current at tp = 2 µs, 1 KHz  
Voltage rate of change (rated VR)  
IRRM  
dv/dt  
TSTG  
TJ  
1.0  
A
V/µs  
°C  
10000  
Storage temperature range  
- 55 to + 150  
115  
Maximum operating junction temperature  
°C  
Document Number 88749  
24-Oct-05  
www.vishay.com  
1

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