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SS23SHE3_B/H PDF预览

SS23SHE3_B/H

更新时间: 2024-11-05 19:42:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 629K
描述
Rectifier Diode,

SS23SHE3_B/H 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownFactory Lead Time:12 weeks
风险等级:5.58Base Number Matches:1

SS23SHE3_B/H 数据手册

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SS22S, SS23S, SS24S  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Schottky Barrier Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Low forward voltage drop, low power losses  
• High efficiency  
• High surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• AEC-Q101 qualified  
SMA (DO-214AC)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
DESIGN SUPPORT TOOLS AVAILABLE  
For use in low voltage, high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
3
D
3
D
3D Models  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
PRIMARY CHARACTERISTICS  
Molding compound meets UL 94 V-0 flammability rating  
IF(AV)  
2.0 A  
Base P/N-E3  
-
RoHS-compliant, commercial grade  
VRRM  
IFSM  
20 V, 30 V, 40 V  
40 A  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B, .....)  
VF at IF = 2.0 A  
0.517 V  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
TJ max.  
Package  
150 °C  
SMA (DO-214AC)  
Single  
meets JESD 201 class 2 whisker test  
Circuit configurations  
Polarity: color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS22S  
22S  
SS23S  
23S  
30  
SS24S  
24S  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (fig. 1)  
VRRM  
IF(AV)  
20  
40  
V
A
2.0  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
40  
A
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
T
J, TSTG  
-55 to +150  
Revision: 14-May-2019  
Document Number: 89008  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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