Datasheet > SS24

SS24

更新时间： 2024-11-09 06:13:55

品牌	Logo	应用领域
DAESAN		二极管光电二极管
页数	文件大小	规格书
2页	310K
描述
CURRENT 2.0Amperes VOLTAGE 20 to 100 Volts

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SS24 数据手册

CURRENT 2.0Amperes

VOLTAGE 20 to 100 Volts

SS22 THRU SS210

Features

· Plastic Package has Underwriters Laboratory

Flammability Classification 94V-0

· Metal silicon junction, majority carrier conduction

· For surface mount applications

DO-214AC (SMA)

· Guard ring for overvoltage protection

· Low power loss, high efficiency

· High current capability, Low forward voltage drop

· High surge capability

0.058(1.47)

0.052(1.32)

0.110(2.79)

0.100(2.54)

· For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

· High temperature soldering guaranteed :

250℃/10 seconds at terminals

0.177(4.50)

0.157(3.99)

0.012(0.31)

0.006(0.15)

0.090(2.29)

0.078(1.98)

Mechanical Data

· Case : JEDEC SMA(DO-214AC) molded plastic body

· Terminals : Solder Plate, solderable per

MIL-STD-750, Method 2026

· Polarity : Color band denotes cathode end

· Weight : 0.002 ounce, 0.064 gram

0.005(0.127)

MAX.

0.060(1.52)

0.030(0.76)

0.208(5.28)

0.194(4.93)

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive

load. For capacitive load, derate by 20%)

Symbols

SS22 SS23 SS24 SS25 SS26 SS28 SS29 SS210 Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

RRM

RMS

100

Volts

Maximum DC blocking voltage

100

Maximum average forward rectified

current 0.375"(9.5mm) lead length(see Fig. 1)

Amps

I(AV

)

2.0

50.0

0.70

Peak forward surge current 8.3ms single half

sine-wave superimposed on rated load

(JEDEC method)

IFSM

Amps

Volts

Maximum instantaneous forward voltage

at 2.0A (Note 1)

0.55

0.85

Maximum instantaneous reverse

current at rated DC blocking

voltage (Note1)

=25℃

1.0

A=100℃

℃/W

Typical thermal resistance (Note 2)

RθJA

℃

Operating junction temperature range

Storage temperature range

-50 to +125

-65 to +150

STG

Notes:

(1) Pulse test: 300μS pulse width, 1% duty cycle

(2) Thermal resistance junction to ambient

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