D A Y A
- TDD-
SS22 - SS21
0
2.0 AMPS. Surface Mount Schottky Barrier Rectifiers
SMA/DO-214AC
Features
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For surface mounted application
Easy pick and place
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low VF
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
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High temperature soldering:
o
260 C / 10 seconds at terminals
Mechanical Data
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Case: Molded plastic
Dimensions in inches and (millimeters)
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.093gram
Maximum Ratings and Electrical Characteristics
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol SS SS SS SS SS SS
SS
Type Number
Units
210
22
20
14
20
23
30
21
30
24
40
28
40
25
50
35
50
26
29
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
60 90
42 63
60 90
100
70
V
V
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
100
V
Maximum Average Forward Rectified Current
at TL(See Fig. 1)
2.0
50
A
A
I(AV)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
Maximum Instantaneous Forward Voltage
o
0.5
0.4
0.70
0.65
0.85
0.70
0.1
(Note 1)
IF= 2.0A @ 25 C
o
V
VF
@ 100 C
o
0.4
Maximum DC Reverse Current @ T =25 C at
A
mA
mA
IR
o
Rated DC Blocking Voltage @ T =125 C
A
10
5.0
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance ( Note 2 )
Cj
130
pF
R
17
75
o
θJL
C/W
R
θJA
o
Operating Temperature Range
Storage Temperature Range
TJ
-65 to +125
-65 to +150
-65 to +150
C
o
TSTG
C
Notes:
1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.4” x 0.4”(10mm x 10mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
- 40 -
Factory Address: Taiguan Industrial zone, Yanjinyu Dongjin Rode No.1, XinXiang, HeNan, China