Datasheet > SS10P3-E3/86A

SS10P3-E3/86A

更新时间： 2024-11-29 05:37:03

品牌	Logo	应用领域
威世 - VISHAY		PC
页数	文件大小	规格书
5页	105K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 30V V(RRM), Silicon, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SS10P3-E3/86A 数据手册

New Product

SS10P3 & SS10P4

Vishay General Semiconductor

High Current Density Surface Mount

Schottky Barrier Rectifiers

FEATURES

eSMP^TMSeries

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Guardring for overvoltage protection

• Low forward voltage drop, low power

losses

• High efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TO-277A (SMPC)

Anode 1

Anode 2

Cathode

• Halogen-free

MECHANICAL DATA

Case: TO-277A (SMPC)

Molding compound meets UL 94V-0 flammability

rating.

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC-Q101 qualified)

PRIMARY CHARACTERISTICS

I_F(AV)

10 A

30 V, 40 V

280 A

V_RRM

I_FSM

E_AS

20 mJ

V_Fat I_F= 10 A

T_Jmax.

0.41 V

Base P/N-M3 - halogen-free and RoHS compliant,

commercial grade

150 °C

Base P/NHM3 - halogen-free and RoHS compliant,

high reliability/automotive grade (AEC-Q101 qualified)

TYPICAL APPLICATIONS

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 and M3 suffix meets JESD 201 class 1A whisker

test, HE3 and HM3 suffix meets JESD 201 class 2

whisker test

For use in low voltage high frequency inverters,

freewheeling, dc-to-dc converters, and polarity

protection applications.

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS10P3

S103

SS10P4

S104

UNIT

Device marking code

V_RRM

I_F(AV)

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

280

Non-repetitive avalanche energy at I_AS= 2 A, T_J= 25 °C

Operating junction and storage temperature range

E_AS

°C

T_J,T_STG

- 55 to + 150

Document Number: 88983

Revision: 30-Jul-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

中文翻译

下载PDF

与SS10P3-E3/86A相关器件

型号	品牌	获取价格	描述	数据表
SS10P3-G3/87A	VISHAY	获取价格	DIODE 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN, Rectifie
SS10P3HE3/86A	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 30V V(RRM), Silicon, TO-277A, ROHS COM
SS10P3HE3/87A	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 30V V(RRM), Silicon, TO-277A, ROHS COM
SS10P3HG3/87A	VISHAY	获取价格	暂无描述
SS10P3HM3/86A	VISHAY	获取价格	DIODE 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLAS
SS10P3HM3/87A	VISHAY	获取价格	DIODE 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLAS
SS10P4	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS10P4_15	VISHAY	获取价格	Schottky Barrier Rectifiers
SS10P4C	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS10P4C_15	VISHAY	获取价格	Schottky Barrier Rectifiers

与SS10P3-E3/86A相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

48
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

66
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

62

产品中心

服务支持

精选活动

关于我们

帮助中心

SS10P3-E3/86A

SS10P3-E3/86A 数据手册

与SS10P3-E3/86A相关器件

与SS10P3-E3/86A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SS10P3-E3/86A

SS10P3-E3/86A 数据手册

与SS10P3-E3/86A相关器件

与SS10P3-E3/86A相关文章

您还可以找

您在本页遇到什么问题？