Datasheet > SS10P4CHG3/87A

SS10P4CHG3/87A

更新时间： 2024-11-29 08:41:39

品牌	Logo	应用领域
威世 - VISHAY		PC
页数	文件大小	规格书
5页	104K
描述
DIODE 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN, Rectifier Diode

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SS10P4CHG3/87A 数据手册

New Product

SS10P3C & SS10P4C

Vishay General Semiconductor

High Current Density Surface Mount

Schottky Barrier Rectifiers

FEATURES

• Very low profile - typical height of 1.1 mm

eSMP^TMSeries

• Ideal for automated placement

• Low forward voltage drop, low power

losses

• High efficiency

• Low thermal resistance

• “Green” molding compound (GMC)

• Meets MSL level 1, per J-STD-020

• Solder dip 260 °C, 40 s

TO-277A (SMPC)

Anode 1

Cathode

Anode 2

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 5 A

MECHANICAL DATA

V_RRM

30 V, 40 V

200 A

Case: TO-277A (SMPC)

I_FSM

Molding compound meets UL 94V-0 flammability

rating.

E_AS

20 mJ

V_Fat I_F= 5 A

T_Jmax.

0.37 V

150 °C

“G” vs. “E” suffix defines molding as none green, “E”,

or green molding compound (GMC) “G”.

“G” is defined as halogen-free (HF) and antimony-free

molding compound.

TYPICAL APPLICATIONS

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 and G3 suffix for consumer grade, meets JESD 201

class 1A whisker test, HE3 and HG3 suffix for

high reliability grade (AEC Q101 qualified), meets

JESD 201 class 2 whisker test

For use in low voltage high frequency inverters,

freewheeling, dc-to-dc converters, and polarity

protection applications.

Note:

• There is no industry standard for definition of HF, or GMC for

components.

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS10P3C

S103C

SS10P4C

S104C

UNIT

Device marking code

V_RRM

I_F(AV)

Maximum repetitive peak reverse voltage

total device

per diode

5.0

Maximum average forward rectified current (Fig. 1)

Peak forward surge current 10 ms single half sine-wave superimposed

on rated load per diode

I_FSM

200

E_AS

Non-repetitive avalanche energy at 25 °C, I_AS= 2 A per diode

Operating junction and storage temperature range

°C

T_J,T_STG

- 55 to + 150

Document Number: 89035

Revision: 26-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

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与SS10P4CHG3/87A相关器件

型号	品牌	获取价格	描述	数据表
SS10P4CHM3/86A	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS10P4CHM3/87A	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS10P4CHM3_A/H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 40V V(RRM), Silicon, TO-277A, HALOGEN F
SS10P4CHM3-86A	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS10P4CHM3-87A	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS10P4C-M3/86A	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS10P4C-M3/87A	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS10P4C-M3-86A	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS10P4C-M3-87A	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers
SS10P4-E3/86A	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers

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