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SS103CL-M3-87A PDF预览

SS103CL-M3-87A

更新时间: 2024-09-16 09:06:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 98K
描述
High Current Density Surface Mount Dual Common-Cathode Schottky Rectifiers

SS103CL-M3-87A 数据手册

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New Product  
SS10P2CL, SS10P3CL  
Vishay General Semiconductor  
High Current Density Surface Mount  
Dual Common-Cathode Schottky Rectifiers  
FEATURES  
• Very low profile - typical height of 1.1 mm  
eSMPTM Series  
• Ideal for automated placement  
• Low forward voltage drop, low power losses  
• High efficiency  
K
• Low thermal resistance  
1
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
2
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TO-277A (SMPC)  
Anode 1  
K
Halogen-free according to IEC 61249-2-21 definition  
Cathode  
Anode 2  
MECHANICAL DATA  
Case: TO-277A (SMPC)  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 5.0 A  
20 V, 30 V  
200 A  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3  
- halogen-free, RoHS compliant, and  
VRRM  
commercial grade  
Base P/NHM3 - halogen-free, RoHS compliant, and  
automotive grade  
IFSM  
EAS  
20 mJ  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix  
meets JESD 201 class 2 whisker test  
VF at IF = 5 A  
TJ max.  
0.338 V  
150 °C  
TYPICAL APPLICATIONS  
For use in high frequency rectifier of switching mode power  
supplies, freewheeling diodes, DC/DC converters and  
polarity protection application.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS10P2CL  
S102CL  
20  
SS10P3CL  
S103CL  
30  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
VRRM  
IF(AV)  
V
A
total device  
Maximum average forward rectified current (fig. 1)  
per diode  
10  
5.0  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
200  
20  
A
Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode  
Operating junction and storage temperature range  
EAS  
mJ  
°C  
TJ, TSTG  
- 55 to + 150  
Document Number: 89036  
Revision: 10-May-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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