Datasheet > SRM2AW416LLBT1

SRM2AW416LLBT1

更新时间： 2024-11-11 19:37:47

品牌	Logo	应用领域
精工 - SEIKO		输入元件静态存储器输出元件内存集成电路
页数	文件大小	规格书
10页	71K
描述
256KX16 STANDARD SRAM, 100ns, PBGA48, TFBGA-48

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数据手册

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SRM2AW416LLBT1 数据手册

PF990-02

SRM2AW416LLBT1/7

4M-bit Static RAM

●Super Low Voltage Operation and Low Current Consumption

●Access Time 100ns (1.8V) / 70ns (2.2V)

●262,144 Words x 16-bit Asynchtonous

●Wide Temperature Range

■ DESCRIPTION

The SRM2AW416LLBT1/7 is a 262,144words x 16-bit asynchronous, random access memory on a monolithic

CMOS chip. Its very low standby power requirement makes it ideat for applications requiring non-volatile syorage

with back-up batteries. The asynchronous and static nature of the memory requires no external clock or refreshing

circuit. It is possible to contorol the date width by the data byte control. Both the Input and output ports are TTL

compatible and 3-state output allows easy expansion of memory capacity. The temperature range of the

SRM2AW416LLBT1/7 is from –40 to 85°C, and it is suitable for the industrial products.

■ FEATURES

● Fast Access time ........................ 100ns (at 1.8V) / 70ns (at 2.2V)

● Low supply current ..................... LL Version

● Completely static ........................ No clock required

● Supply voltage............................ 1.8V to 2.85V

● TTL compatible inputs and outputs

● 3-state output with wired-OR capability

● Non-volatile storage with back-up batteries

● Package ..................................... SRM2AW416LLBT

TFBGA-48 pin (Tape CSP)

■ BLOCK DIAGRAM

1024

Memory Cell Array

1024 x 256 x 16

A10

A11

A12

A13

A14

A15

A16

A17

256x16

256

Column Gate

I/O Buffer

I/O1

I/O16

12 3 4 5 6 7...10

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