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SRM2AW416LLBT7 PDF预览

SRM2AW416LLBT7

更新时间: 2024-09-25 19:37:47
品牌 Logo 应用领域
精工 - SEIKO 输入元件静态存储器输出元件内存集成电路
页数 文件大小 规格书
10页 71K
描述
256KX16 STANDARD SRAM, 70ns, PBGA48, TFBGA-48

SRM2AW416LLBT7 数据手册

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PF990-02  
SRM2AW416LLBT1/7  
4M-bit Static RAM  
Super Low Voltage Operation and Low Current Consumption  
Access Time 100ns (1.8V) / 70ns (2.2V)  
262,144 Words x 16-bit Asynchtonous  
Wide Temperature Range  
DESCRIPTION  
The SRM2AW416LLBT1/7 is a 262,144words x 16-bit asynchronous, random access memory on a monolithic  
CMOS chip. Its very low standby power requirement makes it ideat for applications requiring non-volatile syorage  
with back-up batteries. The asynchronous and static nature of the memory requires no external clock or refreshing  
circuit. It is possible to contorol the date width by the data byte control. Both the Input and output ports are TTL  
compatible and 3-state output allows easy expansion of memory capacity. The temperature range of the  
SRM2AW416LLBT1/7 is from –40 to 85°C, and it is suitable for the industrial products.  
FEATURES  
Fast Access time ........................ 100ns (at 1.8V) / 70ns (at 2.2V)  
Low supply current ..................... LL Version  
Completely static ........................ No clock required  
Supply voltage............................ 1.8V to 2.85V  
TTL compatible inputs and outputs  
3-state output with wired-OR capability  
Non-volatile storage with back-up batteries  
Package ..................................... SRM2AW416LLBT  
TFBGA-48 pin (Tape CSP)  
BLOCK DIAGRAM  
A0  
A1  
A2  
A3  
A4  
A5  
10  
1024  
A6  
Memory Cell Array  
1024 x 256 x 16  
A7  
A8  
A9  
A10  
A11  
A12  
A13  
A14  
A15  
A16  
A17  
256x16  
8
256  
Column Gate  
CS  
LB  
UB  
16  
OE  
I/O Buffer  
WE  
I/O1  
I/O16  

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