Datasheet > SRM2B256SLMX55

SRM2B256SLMX55

更新时间： 2024-11-11 20:31:31

品牌	Logo	应用领域
精工 - SEIKO		静态存储器光电二极管内存集成电路
页数	文件大小	规格书
6页	104K
描述
Standard SRAM, 32KX8, 100ns, CMOS, PDSO28

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SRM2B256SLMX55 数据手册

PF827-03

SRM2B256SLMX55/70/10

256K-Bit Static RAM

● Wide Temperature Range

● Extremely Low Standby Current

● Access Time 100ns (2.7V) /55ns (4.5V)

● 32,768 Words✕8-bit Asynchronous

■ DESCRIPTION

The SRM2B256SLMX is a low voltage operating 32,768 words✕8-bit asynchronous, static, random access

memory fabricated using an advanced CMOS technology. Its very low standby power consumption makes it

ideal for applications requiring non-volatile storage with back-up batteries. And –25 to 85°C operating temperature

range makes it ideal for industrial use. The asynchronous and static nature of the memory requires no external

clock or refresh circuit. Output ports are 3-state output allows easy

expansion of memory capacity. These features makes the

■ PIN CONFIGURATION

SRM2B256SLMX usable for wide range of applications from

(DIP/SOP2)

28 V^DD

27 WE

26 A13

25 A8

24 A9

23 A11

22 OE

21 A10

20 CS

19 I/O8

18 I/O7

17 I/O6

16 I/O5

15 I/O4

A14

A12

I/O1 11

I/O2 12

I/O3 13

V^SS14

microprocesser systems to terminal devices.

■ FEATURES

● Wide temperature range ................... –25 to 85°C

● Extended supply voltage range ......... 2.7 to 5.5V

● Fast access time ............................... 100ns (3V±10%)

55ns (5V±10%)

● Extremely low standby current .......... SL Version

● Completely static ............................... no clock required

● 3-state output

(TSOP)

● Battery back-up operation

21 A10

20 CS

● Package .............. SRM2B256SLCX

DIP2-28pin (plastic)

SOP2-28pin (plastic)

A11 23

19 I/O8

18 I/O7

17 I/O6

16 I/O5

15 I/O4

14 V^SS

13 I/O3

12 I/O2

11 I/O1

10 A0

SRM2B256SLMX

A13 26

V^DD

A14

A12

SRM2B256SLTMX TSOP (I)-28pin (plastic)

SRM2B256SLRMX TSOP (I)-28pin-R1 (plastic)

SRM2B256SLTMX

■ BLOCK DIAGRAM

(TSOP-R1)(Reverse bending)

A10

A11

A12

A13

A14

512

Memory Cell Array

10 A0

512✕64✕8

11 I/O1

12 I/O2

13 I/O3

16 I/O5

17 I/O6

18 I/O7

19 I/O8

20 CS

A12

A14

V^DD

V^SS

I/O4

SRM2B256SLRMX

64✕8

A13 26

Column Gate

A11 23

OE 22

21 A10

■ PIN DESCRIPTION

A0 to A14 Address Input

Write Enable

Output Enable

Chip Select

I/O Buffer

I/O1 to I/O8 Data Input/Output

VDD

VSS

Power Supply (2.7 to 5.5V)

Power Supply (0V)

I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 I/O8

12 3 4 5 6

中文翻译

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与SRM2B256SLMX55相关器件

型号	品牌	获取价格	描述	数据表
SRM2B256SLMX70	ETC	获取价格	x8 SRAM
SRM2B256SLRMT10	ETC	获取价格	x8 SRAM
SRM2B256SLRMT55	ETC	获取价格	x8 SRAM
SRM2B256SLRMT70	ETC	获取价格	x8 SRAM
SRM2B256SLRMX10	SEIKO	获取价格	Standard SRAM, 32KX8, 180ns, CMOS, PDSO28
SRM2B256SLRMX55	SEIKO	获取价格	Standard SRAM, 32KX8, 100ns, CMOS, PDSO28
SRM2B256SLRMX70	SEIKO	获取价格	Standard SRAM, 32KX8, 120ns, CMOS, PDSO28
SRM2B256SLTMT10	ETC	获取价格	x8 SRAM
SRM2B256SLTMT55	ETC	获取价格	x8 SRAM
SRM2B256SLTMT70	ETC	获取价格	x8 SRAM

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