PF873-03
SRM20W117LLTX/SLTX2/7
1M-Bit Static RAM
● Super Low Voltage Operation and Low Current Consumption
● Access Time 120ns (1.8V) / 70ns (2.7V)
● 65,536 WordsX16-Bit Asynchtonous
● Wide Temperature Range
■ DESCRIPTION
The SRM20W117LLTX/SLTX2/7 is a 65,536 words x 16-bit asynchronous, random access memory on a monolithic
CMOS chip. Its very low standby power requirement makes it ideat for applications requiring non-volatile syorage
with back-up batteries. The asynchronous and static nature of the memory requires no external clock or refreshing
circuit. It is possible to contorol the date width by the data byte control. Both the Input and output ports are TTL
compatible and 3-state output allows easy expansion of memory capacity. The temperature range of the
SRM20W117LLTX/SLTX2/7 is from –25 to 85°C, and it is suitable for the industrial products.
■ PIN CONFIGURATION
■ FEATURES
● Fast Access time ........................ 120ns (at 1.8V) / 70ns (at 2.7V)
● Low supply current ..................... LL Version, SL Version
● Completely static ........................ No clock required
● Supply voltage............................ 1.8V to 3.6V
● TTL compatible inputs and outputs
● 3-state output with wired-OR capability
● Non-volatile storage with back-up batteries
● Package ..................................... SRM20W117LLTX/SLTX
TSOP (II)-44pin (Plastic)
(TSOP (II) )
A4
A3
1
2
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
A2
3
A1
4
A0
5
CS
I/O1
I/O2
I/O3
I/O4
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
VDD
VSS
VSS
VDD
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
N.C.
I/O12
I/O11
I/O10
I/O9
N.C.
A8
SRM20W117LLRX/SLRX
A9
A10
A11
N.C.
TSOP (II)-44pin-R1 (Plastic)
■ BLOCK DIAGRAM
(TSOP (II)-R1)
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A4
A3
A2
A1
A0
A1
A2
A3
A0
CS
I/O1
I/O2
I/O3
I/O4
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
9
7
512
Memory Cell Array
512 x 128 x 16
VSS
VDD
VDD
VSS
I/O12
I/O11
IO10
I/O9
N.C.
A8
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
N.C.
128x16
A9
128
A10
A11
N.C.
Column Gate
CS
LB
UB
16
■ PIN DESCRIPTION
A0 to A15 Address Input
WE
OE
CS
LB
Write Enable
Output Enable
Chip Select
LOWER Byte Enable
UPPER Byte Enable
OE
I/O Buffer
WE
UB
I/O1 to 16 Data I/O
VDD
VSS
NC
Power Supply (1.8V to 3.6V)
Power Supply (0V)
No connection
I/O1
I/O16