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SRM20W117SLRX2 PDF预览

SRM20W117SLRX2

更新时间: 2024-11-11 20:43:55
品牌 Logo 应用领域
精工 - SEIKO 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
8页 79K
描述
64KX16 STANDARD SRAM, 120ns, PDSO44, PLASTIC, REVERSE, TSOP2-44

SRM20W117SLRX2 数据手册

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PF873-03  
SRM20W117LLTX/SLTX2/7  
1M-Bit Static RAM  
Super Low Voltage Operation and Low Current Consumption  
Access Time 120ns (1.8V) / 70ns (2.7V)  
65,536 WordsX16-Bit Asynchtonous  
Wide Temperature Range  
DESCRIPTION  
The SRM20W117LLTX/SLTX2/7 is a 65,536 words x 16-bit asynchronous, random access memory on a monolithic  
CMOS chip. Its very low standby power requirement makes it ideat for applications requiring non-volatile syorage  
with back-up batteries. The asynchronous and static nature of the memory requires no external clock or refreshing  
circuit. It is possible to contorol the date width by the data byte control. Both the Input and output ports are TTL  
compatible and 3-state output allows easy expansion of memory capacity. The temperature range of the  
SRM20W117LLTX/SLTX2/7 is from –25 to 85°C, and it is suitable for the industrial products.  
PIN CONFIGURATION  
FEATURES  
Fast Access time ........................ 120ns (at 1.8V) / 70ns (at 2.7V)  
Low supply current ..................... LL Version, SL Version  
Completely static ........................ No clock required  
Supply voltage............................ 1.8V to 3.6V  
TTL compatible inputs and outputs  
3-state output with wired-OR capability  
Non-volatile storage with back-up batteries  
Package ..................................... SRM20W117LLTX/SLTX  
TSOP (II)-44pin (Plastic)  
(TSOP (II) )  
A4  
A3  
1
2
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A5  
A6  
A7  
OE  
UB  
LB  
I/O16  
I/O15  
I/O14  
I/O13  
A2  
3
A1  
4
A0  
5
CS  
I/O1  
I/O2  
I/O3  
I/O4  
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
VDD  
VSS  
VSS  
VDD  
I/O5  
I/O6  
I/O7  
I/O8  
WE  
A15  
A14  
A13  
A12  
N.C.  
I/O12  
I/O11  
I/O10  
I/O9  
N.C.  
A8  
SRM20W117LLRX/SLRX  
A9  
A10  
A11  
N.C.  
TSOP (II)-44pin-R1 (Plastic)  
BLOCK DIAGRAM  
(TSOP (II)-R1)  
A5  
A6  
A7  
OE  
UB  
LB  
I/O16  
I/O15  
I/O14  
I/O13  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
A4  
A3  
A2  
A1  
A0  
A1  
A2  
A3  
A0  
CS  
I/O1  
I/O2  
I/O3  
I/O4  
A4  
A5  
A6  
A7  
A8  
A9  
A10  
A11  
A12  
A13  
A14  
A15  
9
7
512  
Memory Cell Array  
512 x 128 x 16  
VSS  
VDD  
VDD  
VSS  
I/O12  
I/O11  
IO10  
I/O9  
N.C.  
A8  
I/O5  
I/O6  
I/O7  
I/O8  
WE  
A15  
A14  
A13  
A12  
N.C.  
128x16  
A9  
128  
A10  
A11  
N.C.  
Column Gate  
CS  
LB  
UB  
16  
PIN DESCRIPTION  
A0 to A15 Address Input  
WE  
OE  
CS  
LB  
Write Enable  
Output Enable  
Chip Select  
LOWER Byte Enable  
UPPER Byte Enable  
OE  
I/O Buffer  
WE  
UB  
I/O1 to 16 Data I/O  
VDD  
VSS  
NC  
Power Supply (1.8V to 3.6V)  
Power Supply (0V)  
No connection  
I/O1  
I/O16  

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