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SRM10BTRTXV PDF预览

SRM10BTRTXV

更新时间: 2024-09-18 19:12:23
品牌 Logo 应用领域
SSDI 二极管
页数 文件大小 规格书
2页 132K
描述
Rectifier Diode, 1 Phase, 1 Element, 60A, 1000V V(RRM), Silicon, HERMETIC SEALED, BTR, 1 PIN

SRM10BTRTXV 技术参数

生命周期:Active包装说明:E-XEDB-G1
针数:1Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.65其他特性:LOW LEAKAGE CURRENT
应用:GENERAL PURPOSE外壳连接:ANODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:E-XEDB-G1
最大非重复峰值正向电流:800 A元件数量:1
相数:1端子数量:1
最大输出电流:60 A封装主体材料:UNSPECIFIED
封装形状:ELLIPTICAL封装形式:DISK BUTTON
认证状态:Not Qualified最大重复峰值反向电压:1000 V
最大反向恢复时间:5 µs表面贴装:YES
端子形式:GULL WING端子位置:END
Base Number Matches:1

SRM10BTRTXV 数据手册

 浏览型号SRM10BTRTXV的Datasheet PDF文件第2页 
SRM6 thru SRM12  
Series  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, CA 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
60 AMPS  
STANDARD RECOVERY RECTIFIER  
600 - 1200 VOLTS  
Designer’s Data Sheet  
Part Number / Ordering Information1/  
SRM  
___ ___ ___  
Screening 2/  
__ = Not Screened  
5 sec  
TX = TX Level  
TXV = TXV Level  
S = S Level  
FEATURES:  
Replacement for DO-4 or DO-5  
Standard recovery: 5 sec maximum  
PIV to 1200 volts  
Low reverse leakage current  
Hermetically sealed void-free construction  
Monolithic single chip construction  
High surge rating  
Low thermal resistance  
Equivalent to 5961-94022  
TX, TXV, and Space Level Screening Available  
Package Type  
__ = Axial  
SMS = Surface Mount Square Tab  
BTR = Button  
Voltage  
6 = 600V  
8 = 800V  
10 = 1000V  
12 = 1200V  
MAXIMUM RATINGS  
Symbol  
Value  
Units  
Volts  
Peak Repetitive Reverse Voltage and  
DC Blocking Voltage  
SRM6  
SRM8  
SRM10  
SRM12  
600  
800  
1000  
1200  
VRRM  
VRWM  
VR  
Average Rectified Forward Current  
(Resistive Load, 60 Hz Sine Wave; Axial, TL = 100oC; SMS, TE = 100oC;  
Button, TC = 100oC)  
IO  
Amps  
60  
Peak Surge Current  
IFSM  
800  
Amps  
oC  
(8.3 ms Pulse, Half Sine Wave, Superimposed on IO, Allow Junction to Reach  
Equilibrium Between Pulses, TL or TC = 55oC)  
Operating and Storage Temperature  
Maximum Thermal Resistance  
Junction to Lead, L = 3/8”  
Junction to End Tab  
Junction to End  
TOP & Tstg -65 to +175  
RJL  
RJE  
RJC  
3
2.5  
1
Axial (__)  
SMS  
Button (BTR)  
oC/W  
1/ For ordering information, price, operating curves, and availability- Contact factory.  
2/ Screening based on MIL-PRF-19500. Screening flows available on request.  
3/ Unless otherwise specified, all maximum ratings/electrical characteristics @25°C.  
Notes:  
Axial (__)  
Surface Mount Square Tab (SMS)  
Button (BTR)  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0046F  
DOC  

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