Datasheet > SQJ410EP

SQJ410EP

更新时间： 2024-11-09 12:22:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	159K
描述
Automotive N-Channel 30 V (D-S) 175 Â°C MOSFET

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SQJ410EP 数据手册

SQJ410EP

Vishay Siliconix

www.vishay.com

Automotive N-Channel 30 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®Power MOSFET

• AEC-Q101 Qualified^d

PRODUCT SUMMARY

V_DS(V)

R_DS(on)() at V_GS= 10 V

R_DS(on)() at V_GS= 4.5 V

I_D(A)

0.0039

0.0042

• 100 % R_gand UIS Tested

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

Configuration

Single

PowerPAK^®SO-8L Single

N-Channel MOSFET

ORDERING INFORMATION

Package

PowerPAK SO-8L

SQJ410EP-T1-GE3

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

Continuous Drain Current^a

I_D

_C= 125 °C

Continuous Source Current (Diode Conduction)^a

Pulsed Drain Current^b

I_S

I_DM

I_AS

E_AS

128

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

168

T_C= 25 °C

Maximum Power Dissipation^b

P_D

T_C= 125 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{e, f}

T_J, T_stg

- 55 to + 175

260

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-Ambient

PCB Mount^c

°C/W

Junction-to-Case (Drain)

R_thJC

1.8

Notes

a. Package limited.

b. Pulse test; pulse width  300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a

result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to

ensure adequate bottom side solder interconnection.

f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

S12-1860-Rev. C, 13-Aug-12

Document Number: 67003

For technical questions, contact: automos.techsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SQJ410EP相关器件

型号	品牌	获取价格	描述	数据表
SQJ411EP	VISHAY	获取价格	Automotive P-Channel 12 V (D-S) 175 °C MOSFET
SQJ411EP-T1_GE3	VISHAY	获取价格	Power Field-Effect Transistor, 52A I(D), 12V, 0.0058ohm, 1-Element, P-Channel, Silicon, Me
SQJ412EP	VISHAY	获取价格	Automotive N-Channel 40 V (D-S) 175 Â°C MOSFE
SQJ412EP-T1_GE3	VISHAY	获取价格	Power Field-Effect Transistor, 32A I(D), 40V, 0.0045ohm, 1-Element, N-Channel, Silicon, Me
SQJ414EP	VISHAY	获取价格	Automotive N-Channel 30 V (D-S) 175 °C MOSFET
SQJ415EP	VISHAY	获取价格	Automotive P-Channel 40 V (D-S) 175 °C MOSFET
SQJ416EP	VISHAY	获取价格	Automotive Dual N-Channel 12 V (D-S) 175 Â°C
SQJ416EP-T1_GE3	VISHAY	获取价格	Power Field-Effect Transistor,
SQJ418EP	VISHAY	获取价格	Automotive Dual N-Channel 12 V (D-S) 175 Â°C
SQJ420EP	VISHAY	获取价格	Automotive N-Channel 40 V (D-S) 175 °C MOSFET

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