Datasheet > SQJ431EP_15

SQJ431EP_15

更新时间： 2024-11-10 01:24:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	728K
描述
Automotive P-Channel 200 V (D-S) 175 Â°C MOSFET

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SQJ431EP_15 数据手册

SQJ431EP

Vishay Siliconix

www.vishay.com

Automotive P-Channel 200 V (D-S) 175 °C MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET^®Power MOSFET

• AEC-Q101 Qualified^d

PRODUCT SUMMARY

V_DS(V)

- 200

0.213

0.221

- 12

R_DS(on)(Ω) at V_GS= - 10 V

R_DS(on)(Ω) at V_GS= - 6 V

I_D(A)

• 100 % R_gand UIS Tested

Configuration

Single

• Compliant to RoHS Directive 2002/95/EC

PowerPAK^®SO-8L Single

P-Channel MOSFET

ORDERING INFORMATION

Package

PowerPAK SO-8L

SQJ431EP-T1-GE3

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

- 200

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

- 12

Continuous Drain Current

I_D

_C= 125 °C

- 7

Continuous Source Current (Diode Conduction)^a

Pulsed Drain Current^b

I_S

- 30

I_DM

I_AS

E_AS

- 40

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

- 40

L = 0.1 mH

T_C= 25 °C

Maximum Power Dissipation^b

P_D

T_C= 125 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{e, f}

T_J, T_stg

- 55 to + 175

260

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-Ambient

PCB Mount^c

°C/W

Junction-to-Case (Drain)

R_thJC

1.8

Notes

a. Package limited.

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

c. When mounted on 1" square PCB (FR4 material).

d. Parametric verification ongoing.

e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a

result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to

ensure adequate bottom side solder interconnection.

f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

S11-1361-Rev. B, 18-Jul-11

Document Number: 67033

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...11

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与SQJ431EP_15相关器件

型号	品牌	获取价格	描述	数据表
SQJ431EP-T1_GE3	VISHAY	获取价格	Power Field-Effect Transistor, 12A I(D), 200V, 0.221ohm, 1-Element, P-Channel, Silicon, Me
SQJ431EP-T1-GE3	VISHAY	获取价格	TRANSISTOR 12 A, 200 V, 0.221 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COM
SQJ433EP	VISHAY	获取价格	Automotive P-Channel 30 V (D-S) 175 °C MOSFET
SQJ443EP	VISHAY	获取价格	Automotive P-Channel 40 V (D-S) 175 Â°C MOSFE
SQJ444EP	VISHAY	获取价格	Automotive Dual N-Channel 12 V (D-S) 175 Â°C
SQJ446EP	VISHAY	获取价格	Automotive Dual N-Channel 12 V (D-S) 175 Â°C
SQJ454EP	VISHAY	获取价格	Automotive N-Channel 200 V (D-S) 175 °C MOSFE
SQJ456EP	VISHAY	获取价格	Automotive N-Channel 100 V (D-S) 175 Â°C MOSF
SQJ456EP-T1_GE3	VISHAY	获取价格	Power Field-Effect Transistor, 23A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Me
SQJ457EP	VISHAY	获取价格	Automotive Dual N-Channel 12 V (D-S) 175 Â°C

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